发明申请
- 专利标题： Multi-Bit Flash Memory Device and Program and Read Methods Thereof
- 专利标题（中）： 多位闪存设备及其编程和读取方法
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申请号： US12255211申请日： 2008-10-21
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公开(公告)号： US20090103360A1公开(公告)日： 2009-04-23
- 发明人: Dong Ku Kang , Dong-Hyuk Chae , Seung-Jae Lee
- 申请人： Dong Ku Kang , Dong-Hyuk Chae , Seung-Jae Lee
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR2007-106724 20071023
- 主分类号： G11C16/06
- IPC分类号： G11C16/06 ; G11C16/00
摘要：
The flash memory device of the present invention is configured to program a plurality of bits per unit cell, wherein a program condition of a selected bit is set according to whether a program for the most previous bit to the selected bit for programming is skipped or not skipped. As a result, an accurate programming and reading operation is possible even in case a program for a middle bit is skipped.
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