发明申请
- 专利标题： Graded lithographic mask
- 专利标题（中）： 分级光刻面具
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申请号： US11873473申请日： 2007-10-17
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公开(公告)号： US20090104540A1公开(公告)日： 2009-04-23
- 发明人: Byron N. Burgess , Stuart M. Jacobsen
- 申请人： Byron N. Burgess , Stuart M. Jacobsen
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 主分类号： G03F1/00
- IPC分类号： G03F1/00 ; H01L21/8234
摘要：
In one aspect there is provided a gray scale lithographic mask that comprises a transparent substrate and a metallic layer located over the substrate, wherein the metallic layer has tapered edges with a graded transparency. The lithographic mask, along with etching processes may be used to transfer a pattern 450a into a layer of a semiconductor device.
公开/授权文献
- US07883822B2 Graded lithographic mask 公开/授权日：2011-02-08
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