- 专利标题: MICROCRYSTALLINE SILICON DEPOSITION FOR THIN FILM SOLAR APPLICATIONS
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申请号: US11876173申请日: 2007-10-22
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公开(公告)号: US20090104733A1公开(公告)日: 2009-04-23
- 发明人: YONG KEE CHAE , SOO YOUNG CHOI , SHURAN SHENG
- 申请人: YONG KEE CHAE , SOO YOUNG CHOI , SHURAN SHENG
- 主分类号: H01L31/18
- IPC分类号: H01L31/18
摘要:
Embodiments of the invention as recited in the claims relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. In one embodiment a method of forming a thin film multi-junction solar cell over a substrate is provided. The method comprises positioning a substrate in a reaction zone, providing a gas mixture to the reaction zone, wherein the gas mixture comprises a silicon containing compound and hydrogen gas, forming a first region of an intrinsic type microcrystalline silicon layer on the substrate at a first deposition rate, forming a second region of the intrinsic type microcrystalline silicon layer on the substrate at a second deposition rate higher than the first deposition rate, and forming a third region of the intrinsic type microcrystalline silicon layer on the substrate at a third deposition rate lower than the second deposition rate.
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