利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

39 条记录 (耗时 0.015 秒)

    SURFACE TREATMENT PROCESS PERFORMED ON A TRANSPARENT CONDUCTIVE OXIDE LAYER FOR SOLAR CELL APPLICATIONS
    1.
    发明申请
    SURFACE TREATMENT PROCESS PERFORMED ON A TRANSPARENT CONDUCTIVE OXIDE LAYER FOR SOLAR CELL APPLICATIONS 审中-公开
    用于太阳能电池应用的透明导电氧化层的表面处理工艺

    公开(公告)号：US20120107996A1

    公开(公告)日：2012-05-03

    申请号：US12916526

    申请日：2010-10-30

    申请人： Shuran Sheng ,  Lin Zhang ,  Zheng Yuan ,  Yong Kee Chae

    发明人： Shuran Sheng ,  Lin Zhang ,  Zheng Yuan ,  Yong Kee Chae

    IPC分类号： H01L31/18

    CPC分类号： H01L31/076 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/548

    摘要： Embodiments of the invention provide methods of a surface treatment process performing on a transparent conductive oxide layer used in solar cell devices. In one embodiment, a method of performing a surface treatment process includes providing a substrate having a transparent conductive oxide layer disposed thereon in a processing chamber, supplying a gas mixture including an oxygen containing gas into the processing chamber, and performing a surface treatment process using the gas mixture on the surface of the transparent conductive oxide layer.

    摘要翻译： 本发明的实施方案提供了在用于太阳能电池器件的透明导电氧化物层上进行表面处理工艺的方法。 在一个实施例中，执行表面处理工艺的方法包括提供在处理室中设置有透明导电氧化物层的衬底，将包含含氧气体的气体混合物供应到处理室中，并且使用 在透明导电氧化物层的表面上的气体混合物。

    METHOD AND APPARATUS FOR DEPOSITING A SILICON LAYER ON A TRANSMITTING CONDUCTIVE OXIDE LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS
    4.
    发明申请
    METHOD AND APPARATUS FOR DEPOSITING A SILICON LAYER ON A TRANSMITTING CONDUCTIVE OXIDE LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS 审中-公开
    用于在太阳能电池应用中使用的发射导电氧化物层上的硅层沉积的方法和装置

    公开(公告)号：US20080289686A1

    公开(公告)日：2008-11-27

    申请号：US11752794

    申请日：2007-05-23

    申请人： TAE KYUNG WON ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

    发明人： TAE KYUNG WON ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

    IPC分类号： H01L31/04 ,  C23C16/00

    CPC分类号： H01L31/1884 ,  H01L31/022466 ,  H01L31/04 ,  Y02E10/50

    摘要： Methods and apparatus for reducing defects on transmitting conducting oxide (TCO) layer are provided. In one embodiment, a method for depositing a silicon layer on a transmitting conducting oxide (TCO) layer may include providing a substrate having a TCO layer disposed thereon, wherein the TCO layer has a peripheral region and a cell integrated region, the cell integrated region having laser scribing patterns disposed thereon, positioning the substrate on a substrate support assembly disposed in a processing chamber, wherein the substrate support assembly has a roughened surface in contact with the substrate, contacting a shadow frame to the peripheral region of the TCO layer and to the substrate support assembly thereby creating an electrical ground path between the TCO layer and substrate support through the shadow frame, and depositing a silicon containing layer on the TCO layer through an aperture of the shadow frame.

    摘要翻译： 提供了减少传导导电氧化物（TCO）层缺陷的方法和装置。 在一个实施例中，用于在透射导电氧化物（TCO）层上沉积硅层的方法可以包括提供其上设置有TCO层的衬底，其中TCO层具有外围区域和电池集成区域，电池集成区域 其具有设置在其上的激光划线图案，将所述基板定位在设置在处理室中的基板支撑组件上，其中所述基板支撑组件具有与所述基板接触的粗糙表面，将阴影框架接触所述TCO层的周边区域， 衬底支撑组件，从而通过阴影框架在TCO层和衬底支撑件之间形成电接地路径，并且通过阴影框架的孔口在TCO层上沉积含硅层。

    METHODS OF MANUFACTURING BACK SURFACE FIELD AND METALLIZED CONTACTS ON A SOLAR CELL DEVICE
    6.
    发明申请
    METHODS OF MANUFACTURING BACK SURFACE FIELD AND METALLIZED CONTACTS ON A SOLAR CELL DEVICE 审中-公开
    在太阳能电池装置上制造背面和金属化接触的方法

    公开(公告)号：US20130199606A1

    公开(公告)日：2013-08-08

    申请号：US13366817

    申请日：2012-02-06

    申请人： Shuran Sheng ,  Lin Zhang ,  David Tanner ,  Xuesong Lu

    发明人： Shuran Sheng ,  Lin Zhang ,  David Tanner ,  Xuesong Lu

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Embodiments of the present invention are directed to a process for making solar cells. In one embodiment, a method of manufacturing a solar cell device, includes providing a substrate having a first surface and a second surface, selectively disposing a first metal paste in a first pattern on the first surface of the substrate, forming a first dielectric layer over the first metal paste on the first surface of the substrate, forming a second metal paste in a second pattern over the first dielectric layer align with the first metal paste, and simultaneously heating the first and the second metal pastes disposed on the first surface of the substrate to form a first group of contacts on the first surface of the substrate, wherein at least a portion of the second metal paste forms the first group of contacts that each extend through the first dielectric layer to connect with the first metal paste to the first surface of the substrate.

    摘要翻译： 本发明的实施例涉及制造太阳能电池的方法。 在一个实施例中，制造太阳能电池器件的方法包括提供具有第一表面和第二表面的衬底，在衬底的第一表面上选择性地将第一金属膏以第一图案布置，形成第一介电层， 在第一介电层上形成第二图案的第二金属膏与第一金属膏对准，同时加热设置在第一金属膏的第一表面上的第一和第二金属浆料， 衬底，以在衬底的第一表面上形成第一组触点，其中第二金属膏的至少一部分形成第一组触点，每组触点延伸穿过第一电介质层，以将第一金属膏连接到第一组 基板的表面。

    ROUGHNESS CONTROL OF A WAVELENGTH SELECTIVE REFLECTOR LAYER FOR THIN FILM SOLAR APPLICATIONS
    7.
    发明申请
    ROUGHNESS CONTROL OF A WAVELENGTH SELECTIVE REFLECTOR LAYER FOR THIN FILM SOLAR APPLICATIONS 审中-公开
    用于薄膜太阳能应用的波长选择反射器层的粗糙度控制

    公开(公告)号：US20110120536A1

    公开(公告)日：2011-05-26

    申请号：US12623277

    申请日：2009-11-20

    申请人： DAPENG WANG ,  Shuran Sheng ,  Yong-Kee Chae

    发明人： DAPENG WANG ,  Shuran Sheng ,  Yong-Kee Chae

    IPC分类号： H01L31/0236 ,  H01L31/18

    CPC分类号： H01L31/075 ,  H01L31/02165 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/056 ,  H01L31/1816 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

    摘要： A method and apparatus for forming a roughened wavelength selective reflector layer are provided. In one embodiment, a method of forming a solar cell device includes forming a wavelength selective reflector layer between a first p-i-n junction and a second p-i-n junction formed on a substrate, and performing a post treatment process on the wavelength selective reflector layer to form the uneven surface with the roughness greater than 20 nm. In another embodiment, a photovoltaic device includes a wavelength selective reflector layer disposed between a first p-i-n junction and a second p-i-n junction formed on a substrate, wherein the wavelength selective reflector layer has an uneven surface having a surface roughness greater than 20 nm.

    摘要翻译： 提供了形成粗糙波长选择反射层的方法和装置。 在一个实施例中，形成太阳能电池器件的方法包括在形成在衬底上的第一pin结和第二pin结之间形成波长选择性反射层，并对波长选择反射层进行后处理，以形成不均匀的 表面粗糙度大于20nm。 在另一个实施例中，光伏器件包括设置在形成在衬底上的第一p-i-n结和第二p-i-n结之间的波长选择反射层，其中波长选择反射层具有表面粗糙度大于20nm的不平坦表面。

    GAS MIXING METHOD REALIZED BY BACK DIFFUSION IN A PECVD SYSTEM WITH SHOWERHEAD
    8.
    发明申请
    GAS MIXING METHOD REALIZED BY BACK DIFFUSION IN A PECVD SYSTEM WITH SHOWERHEAD 有权
    在具有淋浴的PECVD系统中通过反扩散实现的气体混合方法

    公开(公告)号：US20110053356A1

    公开(公告)日：2011-03-03

    申请号：US12553007

    申请日：2009-09-02

    申请人： Xiesen Yang ,  Yong-Kee Chae ,  Shuran Sheng ,  Liwei Li

    发明人： Xiesen Yang ,  Yong-Kee Chae ,  Shuran Sheng ,  Liwei Li

    IPC分类号： H01L21/205

    CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/452 ,  C23C16/45512 ,  C23C16/45565 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/02532 ,  H01L21/02595

    摘要： Embodiments of the present invention generally relate to methods of forming a microcrystalline silicon layer on a substrate in a deposition chamber. In, one embodiment, the method includes flowing a processing gas into a diffuser region between a backing plate and a showerhead of the deposition chamber, flowing the processing gas through a plurality of holes in the showerhead and into a process volume between the showerhead and a substrate support in the deposition chamber, igniting a plasma in the process volume, back-flowing gas ions formed in the plasma through the plurality of holes in the showerhead and into the diffuser region, mixing the gas ions and the processing gas in the diffuser region, re-flowing the gas ions and processing gas through the plurality of holes in the showerhead and into the process volume, and depositing a microcrystalline silicon layer on the substrate.

    摘要翻译： 本发明的实施方案一般涉及在沉积室中的衬底上形成微晶硅层的方法。 在一个实施例中，该方法包括将处理气体流入到沉积室的背板和喷头之间的扩散器区域中，使处理气体通过喷头中的多个孔流入喷头和喷淋头之间的过程体积 在沉积室中的基板支撑件，点燃处理体积中的等离子体，在等离子体中形成的回流气体离子通过喷头中的多个孔并进入扩散器区域，将气体离子和处理气体混合在扩散器区域 使气体离子和处理气体再次流过喷头中的多个孔并进入处理体积，并在基底上沉积微晶硅层。