发明申请
- 专利标题： POWER SUPPLY CIRCUIT USING INSULATED-GATE FIELD-EFFECT TRANSISTORS
- 专利标题（中）： 使用绝缘栅场效应晶体管的电源电路
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申请号： US12250999申请日： 2008-10-14
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公开(公告)号： US20090108919A1公开(公告)日： 2009-04-30
- 发明人: Ryu OGIWARA , Daisaburo Takashima
- 申请人： Ryu OGIWARA , Daisaburo Takashima
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-268226 20071015
- 主分类号： G05F1/10
- IPC分类号： G05F1/10
摘要：
A power supply circuit is disclosed. The power supply circuit is provided with a reference voltage generation circuit to receive a voltage from a higher voltage supply so as to generate a reference voltage. The reference voltage from the reference voltage generation circuit is outputted to a power supply voltage generation circuit. The power supply voltage generation circuit boosts the reference voltage to generate a boosted power supply voltage. The boosted power supply voltage is inputted to a bandgap reference circuit. The bandgap reference circuit generates a reference voltage by using the boosted power supply voltage.
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