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发明申请
US20090116272A1 Non-volatile memory device including diode-storage node and cross-point memory array including the non-volatile memory device 有权
包括二极管存储节点和包括非易失性存储器件的交叉点存储器阵列的非易失性存储器件

Non-volatile memory device including diode-storage node and cross-point memory array including the non-volatile memory device
摘要：
Provided are a non-volatile memory device and a cross-point memory array including the same which have a diode characteristic enabling the non-volatile memory device and the cross-point memory array including the same to operate in a simple structure, without requiring a switching device separately formed so as to embody a high density non-volatile memory device. The non-volatile memory device includes a first electrode; a diode-storage node formed on the first electrode; and a second electrode formed on the diode-storage node.
摘要（中）：

提供了一种非易失性存储器件和包括该非易失性存储器件的交叉点存储器阵列，其具有使得非易失性存储器件的二极管特性和包括其的交叉点存储器阵列能够以简单的结构工作，而不需要 开关装置分开形成，以便体现高密度非易失性存储装置。 非易失性存储器件包括第一电极; 形成在所述第一电极上的二极管存储节点; 以及形成在二极管存储节点上的第二电极。

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