发明申请
US20090117680A1 METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
制造光电转换装置的方法

  • 专利标题: METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE
  • 专利标题(中): 制造光电转换装置的方法
  • 申请号: US12260302
    申请日: 2008-10-29
  • 公开(公告)号: US20090117680A1
    公开(公告)日: 2009-05-07
  • 发明人: Shunpei YAMAZAKIYasuyuki ARAI
  • 申请人: Shunpei YAMAZAKIYasuyuki ARAI
  • 优先权: JP2007-285252 20071101; JP2007-285253 20071101
  • 主分类号: H01L31/036
  • IPC分类号: H01L31/036
METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE
摘要:
A photoelectric conversion device which is excellent in photoelectric conversion characteristics is provided by effectively utilizing silicon semiconductor materials. The present invention relates to a method for manufacturing a photoelectric conversion device using a solar cell, in which a plurality of single crystal semiconductor substrates in each of which a damaged layer is formed at a predetermined depth is arranged over a supporting substrate having an insulating surface; a surface layer part of the single crystal semiconductor substrate is separated thinly using the damaged layer as a boundary so as to form a single crystal semiconductor layer over one surface of the supporting substrate; and the single crystal semiconductor layer is irradiated with a laser beam from a surface side which is exposed by separation of the single crystal semiconductor layer to planarize the surface of the single crystal semiconductor layer.
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