发明申请
- 专利标题: METHODS OF SELECTIVELY DEPOSITING SILICON-CONTAINING FILMS
- 专利标题(中): 选择性沉积含硅膜的方法
-
申请号: US11935174申请日: 2007-11-05
-
公开(公告)号: US20090117717A1公开(公告)日: 2009-05-07
- 发明人: Pierre Tomasini , Nyles Cody
- 申请人: Pierre Tomasini , Nyles Cody
- 申请人地址: US AZ Phoenix
- 专利权人: ASM America, Inc.
- 当前专利权人: ASM America, Inc.
- 当前专利权人地址: US AZ Phoenix
- 主分类号: H01L21/36
- IPC分类号: H01L21/36 ; H01L21/306
摘要:
An embodiment provides a method for selectively depositing a single crystalline film. The method includes providing a substrate, which includes a first surface having a first surface morphology and a second surface having a second surface morphology different from the first surface morphology. A silicon precursor and BCl3 are intermixed to thereby form a feed gas. The feed gas is introduced to the substrate under chemical vapor deposition conditions. A Si-containing layer is selectively deposited onto the first surface without depositing on the second surface by introducing the feed gas.
公开/授权文献
- US07772097B2 Methods of selectively depositing silicon-containing films 公开/授权日:2010-08-10