公开(公告)号：US10468291B2

公开(公告)日：2019-11-05

申请号：US15092414

申请日：2016-04-06

申请人： ASM America, Inc.

发明人： Mohith Verghese ,  Kyle Fondurulia ,  Carl White ,  Eric Shero ,  Darko Babic ,  Herbert Terhorst ,  Marko Peussa ,  Min Yan

IPC分类号： C23C16/40 ,  H01L21/687 ,  C23C16/455 ,  C23C16/458 ,  C23C16/44 ,  C30B35/00 ,  H01L21/67

摘要： An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

公开(公告)号：US09297705B2

公开(公告)日：2016-03-29

申请号：US12436306

申请日：2009-05-06

申请人： Ravinder K. Aggarwal ,  Rand Conner

发明人： Ravinder K. Aggarwal ,  Rand Conner

IPC分类号： G01K1/14 ,  G01K7/02 ,  G01K1/02 ,  G05D23/19 ,  G05D23/22

CPC分类号： G01K7/02 ,  G01K1/02 ,  G05D23/1931 ,  G05D23/22

摘要： A temperature measuring device having a smart chip, or electronic circuit, integrated therein is provided. The smart chip, or electronic circuit, includes at least a unique identification number or data specific to the particular temperature measuring device stored thereon. The electronic circuit further includes calibration data of the temperature measuring device stored thereon. A module controller of a temperature control system is configured to verify the unique identification number of the thermocouple assembly prior to allowing data to be transferred between the temperature measuring device and a temperature controller. A graphical user interface allows an operator to enter the unique identification number or data to verify the temperature measuring device and display an error message if the number or data entered is not equivalent, or does not match, the unique identification number or data stored on the electronic circuit.

摘要翻译： 提供一种具有集成在其中的智能芯片或电子电路的温度测量装置。 智能芯片或电子电路至少包括唯一的识别号或特定于其上存储的特定温度测量装置的数据。 电子电路还包括存储在其上的温度测量装置的校准数据。 温度控制系统的模块控制器被配置为在允许在温度测量装置和温度控制器之间传送数据之前验证热电偶组件的唯一标识号。 图形用户界面允许操作员输入唯一的识别号码或数据来验证温度测量设备，并且如果所输入的数字或数据不等同于或不匹配存储在该存储器上的唯一标识号或数据，则显示错误消息 电子电路。

公开(公告)号：US08883270B2

公开(公告)日：2014-11-11

申请号：US12854818

申请日：2010-08-11

申请人： Eric Shero ,  Petri I. Raisanen ,  Sung Hoon Jung ,  Chang-Gong Wang

发明人： Eric Shero ,  Petri I. Raisanen ,  Sung Hoon Jung ,  Chang-Gong Wang

IPC分类号： H05H1/24 ,  C23C16/40 ,  C01B13/11 ,  C23C16/455 ,  C23C16/52

CPC分类号： C23C16/40 ,  C01B13/11 ,  C01B2201/64 ,  C23C16/45553 ,  C23C16/52

摘要： Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.

摘要翻译： 描述了系统和方法，其中除了别的以外是将膜沉积在反应室内的基底上。 在示例性方法中，该方法可以包括将原子层沉积循环应用于衬底，其中该循环可以包括将衬底暴露于用于前体脉冲间隔的前体气体，然后在此之后除去前体气体，并将衬底暴露于 氧化剂，其包含氧化剂气体和用于氧化脉冲间隔的含氮物质气体，然后除去氧化剂。 本发明的方面利用分子激发的氮氧自由基/离子物质可能与氧化剂如臭氧进一步组合。 本发明的实施例还包括电子部件和系统，其包括用与本发明一致的方法制造的装置。

公开(公告)号：US08809195B2

公开(公告)日：2014-08-19

申请号：US12254652

申请日：2008-10-20

申请人： Kai-Erik Elers

发明人： Kai-Erik Elers

IPC分类号： H01L21/302

CPC分类号： H01L21/31122

摘要： A dry etch method, apparatus, and system for etching a high-k material comprises sequentially contacting the high-k material with a vapor phase reducing agent, and a volatilizing etchant in a cyclical process. In some preferred embodiments, the reducing agent and/or volatilizing etchant is plasma activated. Control over etch rate and/or selectivity are improved by the pulsed process, where, in some embodiments, each step in the cyclical process has a self-limited extent of etching. Embodiments of the method are useful in the fabrication of integrated devices, as well as for cleaning process chambers.

摘要翻译： 用于蚀刻高k材料的干蚀刻方法，设备和系统包括在循环过程中依次使高k材料与气相还原剂和挥发性蚀刻剂接触。 在一些优选的实施方案中，还原剂和/或挥发腐蚀剂是等离子体活化的。 通过脉冲过程改善了蚀刻速率和/或选择性的控制，其中在一些实施例中，循环过程中的每个步骤具有自限制的蚀刻程度。 该方法的实施例在集成装置的制造以及清洁处理室中是有用的。

公开(公告)号：US08759226B2

公开(公告)日：2014-06-24

申请号：US13608075

申请日：2012-09-10

申请人： Joseph C. Reed ,  Eric J. Shero

发明人： Joseph C. Reed ,  Eric J. Shero

IPC分类号： H01L21/00

CPC分类号： H01L21/68764 ,  H01L21/68742

摘要： A semiconductor processing apparatus includes a reaction chamber, a loading chamber, a movable support, a drive mechanism, and a control system. The reaction chamber includes a baseplate. The baseplate includes an opening. The movable support is configured to hold a workpiece. The drive mechanism is configured to move a workpiece held on the support towards the opening of the baseplate into a processing position. The control system is configured to create a positive pressure gradient between the reaction chamber and the loading chamber while the workpiece support is in motion. Purge gases flow from the reaction chamber into the loading chamber while the workpiece support is in motion. The control system is configured to create a negative pressure gradient between the reaction chamber and the loading chamber while the workpiece is being processed. Purge gases can flow from the loading chamber into the reaction chamber while the workpiece support is in the processing position, unless the reaction chamber is sealed from the loading chamber in the processing position.

摘要翻译： 半导体处理装置包括反应室，装载室，可移动支撑件，驱动机构和控制系统。 反应室包括底板。 底板包括一个开口。 可移动支撑件构造成保持工件。 驱动机构构造成将保持在支撑件上的工件朝向基板的开口移动到处理位置。 控制系统构造成在工件支撑件运动的同时在反应室和装载室之间产生正压梯度。 当工件支撑件运动时，吹扫气体从反应室流入装载室。 控制系统配置成在处理工件时在反应室和装载室之间产生负压梯度。 除非在处理位置将反应室与装载室密封，否则吹扫气体可能在工件支撑件处于加工位置时从装载室流入反应室。

公开(公告)号：US20130160709A1

公开(公告)日：2013-06-27

申请号：US13337604

申请日：2011-12-27

申请人： Carl L. White ,  Eric Shero

发明人： Carl L. White ,  Eric Shero

IPC分类号： C23C16/455

CPC分类号： C23C16/45525 ,  C23C16/4402 ,  C23C16/4408 ,  C23C16/45544 ,  C23C16/45561

摘要： A device for performing ALD includes a housing having a vacuum chamber that surrounds a horizontal flow reactor. The device further includes a gas distribution system for delivering gases to the reactor. The gas distribution system includes at least one of a high temperature valve and a high temperature filter disposed inside the vacuum chamber. The high temperature valve (and/or filter) controls (and/or filters) a supply of a precursor/reactant gas, inert gas, or precursor/reactant and inert gas mixture before it enters the horizontal flow reactor.

摘要翻译： 用于执行ALD的装置包括具有围绕水平流动反应器的真空室的壳体。 该装置还包括用于将气体输送到反应器的气体分配系统。 气体分配系统包括设置在真空室内的高温阀和高温过滤器中的至少一个。 在进入水平流动反应器之前，高温阀（和/或过滤器）控制（和/或过滤）前体/反应物气体，惰性气体或前体/反应物和惰性气体混合物的供应。

公开(公告)号：US20130104992A1

公开(公告)日：2013-05-02

申请号：US13312591

申请日：2011-12-06

申请人： Andrew M. Yednak, III ,  Todd Dunn ,  Carl White ,  Michael Manasco

发明人： Andrew M. Yednak, III ,  Todd Dunn ,  Carl White ,  Michael Manasco

IPC分类号： F16K49/00

CPC分类号： C23C16/45561 ,  C23C16/45512 ,  F16K27/003 ,  F16K49/002 ,  Y10T137/0318 ,  Y10T137/6416 ,  Y10T137/6606 ,  Y10T137/7036

摘要： A valve assembly including a mounting block having a first surface, a plurality of valves connected to the mounting block first surface, at least one fluid line connecting the plurality of valves spaced apart from the mounting block first surface, a heating element spaced apart from the at least one fluid line and located within a first insulating layer, and wherein the first insulating layer extends less than completely around the at least one fluid line.

摘要翻译： 一种阀组件，包括具有第一表面的安装块，连接到安装块第一表面的多个阀，连接多个与所述安装块第一表面间隔开的阀的至少一个流体管线，与所述安装块间隔开的加热元件 至少一个流体管线并且位于第一绝缘层内，并且其中所述第一绝缘层的延伸小于完全围绕所述至少一个流体管线。

公开(公告)号：US20130023129A1

公开(公告)日：2013-01-24

申请号：US13187300

申请日：2011-07-20

申请人： Joseph Charles Reed

发明人： Joseph Charles Reed

IPC分类号： H01L21/30 ,  C23C16/52 ,  C23C16/455

CPC分类号： C23C16/4412 ,  C23C16/52

摘要： Embodiments related to measuring process pressure in low-pressure semiconductor processing environments are provided. In one example, a semiconductor processing module for processing a substrate with a process gas in a vacuum chamber is provided. The example module includes a reactor positioned within the vacuum chamber for processing the substrate with the process gas and a pressure-sensitive structure operative to transmit a pressure transmission fluid pressure to a location exterior to the vacuum chamber. In this example, the pressure transmission fluid pressure varies in response to the process gas pressure within the vacuum chamber.

摘要翻译： 提供了与在低压半导体处理环境中测量工艺压力有关的实施例。 在一个实例中，提供了一种用于在真空室中处理具有处理气体的衬底的半导体处理模块。 示例性模块包括位于真空室内的反应器，用于使用工艺气体处理衬底，以及压力敏感结构，其将压力传递流体压力传递到真空室外部的位置。 在该示例中，压力传递流体压力响应于真空室内的处理气体压力而变化。

公开(公告)号：US08262287B2

公开(公告)日：2012-09-11

申请号：US12330096

申请日：2008-12-08

申请人： Buz Darabnia ,  Andy Yednak ,  Mike Halpin ,  Loren Jacobs ,  Ravinder Aggarwal

发明人： Buz Darabnia ,  Andy Yednak ,  Mike Halpin ,  Loren Jacobs ,  Ravinder Aggarwal

IPC分类号： G05D23/00 ,  G01K7/02

CPC分类号： G01K7/04 ,  C23C16/46 ,  G01K13/00

摘要： A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

摘要翻译： 描述了用于半导体加工反应的热电偶。 热电偶包括具有测量尖端和在相对端的开口的护套。 接收第一线和第二线的一部分的支撑构件被容纳在护套内。 第一和第二线形成在测量尖端处接触鞘的内表面的接合点。 间隔构件固定在护套的开口处并接收支撑构件。 间隔构件允许支撑构件，第一线和第二线自由地相对于彼此热膨胀而不在其中引入压缩或拉伸应力。

公开(公告)号：US20120100308A1

公开(公告)日：2012-04-26

申请号：US12911585

申请日：2010-10-25

申请人： Robert B. Milligan ,  Dong Li ,  Steven Marcus

发明人： Robert B. Milligan ,  Dong Li ,  Steven Marcus

IPC分类号： H05H1/42 ,  B05C11/00

CPC分类号： H01J37/32009 ,  C23C16/36 ,  C23C16/45542

摘要： Methods and equipment for forming ternary metal alloys are provided. In some embodiments, TaCN thin films are deposited by exposing a substrate to alternating pulses of an organometallic tantalum precursor comprising nitrogen and carbon and hydrogen plasma. The stoichiometry of the film is tuned from carbon rich to nitrogen rich by adjusting the plasma parameters, particularly the plasma power and duration. In this way, films with varied characteristics can be formed from the same precursor. For example, both n-type and p-type materials can be deposited in the same module using the same precursor.

摘要翻译： 提供了形成三元金属合金的方法和设备。 在一些实施方案中，通过将衬底暴露于包含氮和碳和氢等离子体的有机金属钽前体的交替脉冲来沉积TaCN薄膜。 通过调节等离子体参数，特别是等离子体功率和持续时间，将膜的化学计量从富碳调节到富氮。 以这种方式，可以从相同的前体形成具有不同特性的膜。 例如，可以使用相同的前体将n型和p型材料沉积在相同的模块中。