发明申请
- 专利标题： HIGH FREQUENCY DIODE AND METHOD FOR PRODUCING SAME
- 专利标题（中）： 高频二极管及其制造方法
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申请号： US12327715申请日： 2008-12-03
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公开(公告)号： US20090117719A1公开(公告)日： 2009-05-07
- 发明人: Kazunari Kurita
- 申请人： Kazunari Kurita
- 申请人地址： JP Tokyo
- 专利权人： Sumco Corporation
- 当前专利权人： Sumco Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-022832 20060131
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A high frequency diode comprising: a P type region, a N type region, and an I layer as a high resistivity layer interposed between the P type region and the N type region, wherein the I layer is made of a silicon wafer that has a carbon concentration of 5×1015 to 5×1017 atoms/cm3 interstitial oxygen concentration of 6.5×1017 to 13.5×1017 atoms/cm3, and a resistivity of 100 Ωcm or more.
公开/授权文献
- US07893434B2 High frequency diode and method for producing same 公开/授权日：2011-02-22
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