公开(公告)号：US09281197B2

公开(公告)日：2016-03-08

申请号：US13124578

申请日：2009-10-16

申请人： Kazunari Kurita

发明人： Kazunari Kurita

IPC分类号： H01L31/02 ,  H01L21/268 ,  H01L21/322 ,  H01L27/146 ,  C30B29/06

CPC分类号： H01L21/268 ,  C30B29/06 ,  H01L21/322 ,  H01L27/14603 ,  H01L27/14698 ,  Y10S117/904

摘要： A semiconductor wafer is set in a laser irradiation apparatus, and laser beam irradiation is performed while the semiconductor wafer is moved. At this time, a laser beam emitted from a laser generating apparatus is condensed by a condensing lens so that the condensing point (focal point) is positioned at a depth of several tens ofμm or so from one surface of the semiconductor wafer. Thereby, the crystal structure of the semiconductor wafer in the position having such a depth is modified, and a gettering sink is formed.

摘要翻译： 将半导体晶片设置在激光照射装置中，并且在半导体晶片移动的同时进行激光束照射。 此时，从激光发生装置发射的激光束通过聚光透镜凝结，使得聚光点（焦点）位于半导体晶片的一个表面的几十μm的深度。 由此，改变了具有这样深度的位置的半导体晶片的晶体结构，形成了吸杂槽。

公开(公告)号：US08658516B2

公开(公告)日：2014-02-25

申请号：US13016236

申请日：2011-01-28

申请人： Kazunari Kurita

发明人： Kazunari Kurita

IPC分类号： H01L21/322

CPC分类号： B23K26/0676 ,  B23K26/0006 ,  B23K26/53 ,  B23K2103/56 ,  H01L21/268 ,  H01L21/3221 ,  H01L27/14683

摘要： An object of the present invention is to provide a method of producing a silicon wafer and a method of producing an epitaxial wafer, which enable easily forming a gettering site in a relatively short period of time and effectively suppressing occurrence of dislocation induced by internal stresses. Specifically, the present invention provides a method of producing a silicon wafer, comprising: irradiating a first laser beam having a relatively long wavelength and a second laser beam having a relatively short wavelength onto a portion of a silicon wafer located at a predetermined depth measured from a surface of the silicon wafer, wherein the first laser beam is concentrated at a portion located at a predetermined depth of the wafer to form a process-affected layer for gettering heavy metals thereat, the second laser beam is concentrated at a beam-concentration portion in the vicinity of the surface of the wafer to melt the beam-concentration portion, the beam-concentration portion is then recrystallized.

摘要翻译： 本发明的目的在于提供一种硅晶片的制造方法及外延晶片的制造方法，其能够在较短的时间内容易地形成吸杂位置，有效地抑制由内部应力引起的位错的发生。 具体地，本发明提供一种制造硅晶片的方法，包括：将具有较长波长的第一激光束和具有较短波长的第二激光束照射在位于从 硅晶片的表面，其中第一激光束集中在位于晶片的预定深度的部分处以形成用于吸收重金属的工艺影响层，第二激光束集中在光束浓度部分 在晶片表面附近熔化光束浓度部分，然后将光束浓度部分重结晶。

公开(公告)号：US08063466B2

公开(公告)日：2011-11-22

申请号：US11996925

申请日：2007-09-07

申请人： Kazunari Kurita

发明人： Kazunari Kurita

IPC分类号： H01L31/14 ,  H01L31/18

CPC分类号： H01L31/186 ,  C30B15/04 ,  C30B29/06 ,  C30B33/02 ,  H01L21/3221 ,  H01L27/14603 ,  Y02E10/50 ,  Y02P70/521

摘要： There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved.Silicon substrate contains solid-soluted carbon having a concentration of 1×1016-1×1017 atoms/cm3 and solid-soluted oxygen having a concentration of 1.4×1018-1.6×1018 atoms/cm3.

摘要翻译： 提供了一种用于固体摄像装置的半导体衬底，其中生产成本低于通过碳离子注入的吸气方法的生产成本，并且解决了在器件制造步骤等处发生颗粒的问题。 硅衬底含有浓度为1×1016-1×1017原子/ cm3的固溶碳，浓度为1.4×1018-1.6×1018原子/ cm3的固溶氧。

公开(公告)号：US20100062584A1

公开(公告)日：2010-03-11

申请号：US12553353

申请日：2009-09-03

申请人： Kazunari Kurita ,  Shuichi Omote

发明人： Kazunari Kurita ,  Shuichi Omote

IPC分类号： H01L21/302

CPC分类号： H01L21/76256 ,  H01L27/1464

摘要： A wafer for backside illumination type solid imaging device having a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side is produced by a method comprising a step of forming a BOX oxide layer on at least one of a wafer for support substrate and a wafer for active layer, a step of bonding the wafer for support substrate and the wafer for active layer and a step of thinning the wafer for active layer, which further comprises a step of forming a plurality of concave portions on a bonding face of the BOX oxide layer to the other wafer and filling a polysilicon plug into each of the concave portions to form a composite layer before the step of bonding the wafer for support substrate and the wafer for active layer.

摘要翻译： 通过包括以下步骤的方法制造具有包括光电转换装置在内的多个像素的背面照明型固体成像装置和其表面侧的电荷传输晶体管的晶片， 在用于支撑衬底的晶片和用于有源层的晶片中的至少一个上的BOX氧化物层，用于支撑衬底的晶片和用于有源层的晶片的步骤以及用于有源层的晶片的薄化步骤，其还包括 在BOX氧化物层的接合面上形成多个凹部到另一个晶片的步骤，并且在将用于支撑衬底的晶片接合步骤之前将多晶硅插塞填充到每个凹部中以形成复合层， 晶圆用于活性层。

公开(公告)号：US07507640B2

公开(公告)日：2009-03-24

申请号：US11706439

申请日：2007-02-14

申请人： Kazunari Kurita

发明人： Kazunari Kurita

IPC分类号： H01L21/322

CPC分类号： H01L21/3225 ,  H01L21/268

摘要： A method for producing a silicon wafer, comprising performing an activation of metallic impurities by irradiating laser light on the metallic impurities constituting contaminants in the silicon wafer, changing the electric charge of the contaminants, and activating the contaminants to a state such that the contaminants easily react with oxygen precipitation nuclei and are subjected to gettering.

摘要翻译： 一种硅晶片的制造方法，其特征在于，通过对构成所述硅晶片中的污染物的金属杂质进行激光照射来激活金属杂质，改变污染物的电荷，使污染物活化，使污染物容易 与氧沉淀核反应并进行吸气。

公开(公告)号：US20060130738A1

公开(公告)日：2006-06-22

申请号：US10531434

申请日：2003-10-17

申请人： Kazunari Kurita ,  Jun Furukawa

发明人： Kazunari Kurita ,  Jun Furukawa

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B33/00 ,  C04B24/003 ,  C04B28/146 ,  C04B2111/00836 ,  C30B15/00 ,  C30B29/06 ,  Y10T117/1008 ,  C04B22/147 ,  C04B24/04 ,  C04B2103/69

摘要： A single crystal ingot is cut to an axial direction so as to including the central axis, a sample for measurement including regions [V], [Pv], [Pi] and [I] is prepared, and a first sample and second sample are prepared by dividing the sample into two so as to be symmetrical against the central axis. A first transition metal is metal-stained on the surface of the first sample and a second transition metal different from the first transition metal is metal-stained on the surface of the second sample. The first and second samples stained with the metals are thermally treated and the first and second transition metals are diffused into the inside of the samples. Recombination lifetimes in the whole of the first and second samples are respectively measured, and the vertical measurement of the first sample is overlapped on the vertical measurement of the second sample. The boundary between the regions [Pi] and [I] and the boundary between the regions [V] and [Pv] are respectively specified from the overlapped result.

摘要翻译： 将单晶锭切割成包含中心轴的轴向方向，准备包括区域[V]，[Pv]，[Pi]和[I]的测量用样品，第一样品和第二样品为 通过将样品分成两部分以相对于中心轴对称制备。 第一过渡金属在第一样品的表面被金属染色，并且与第一过渡金属不同的第二过渡金属在第二样品的表面上金属染色。 用金属染色的第一和第二样品被热处理，并且第一和第二过渡金属被扩散到样品的内部。 分别测量整个第一和第二样品中的重组寿命，并且第一样品的垂直测量与第二样品的垂直测量重叠。 区域[Pi]和[I]之间的边界以及区域[V]和[Pv]之间的边界分别由重叠结果指定。

公开(公告)号：US20140080247A1

公开(公告)日：2014-03-20

申请号：US14116318

申请日：2012-03-19

申请人： Takeshi Kadono ,  Kazunari Kurita

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L21/02 ,  H01L27/146 ,  H01L29/36

CPC分类号： H01L27/14698 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/26566 ,  H01L21/3221 ,  H01L27/1464 ,  H01L27/14687 ,  H01L29/36

摘要： The present invention provides a method of more efficiently producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability.A method of producing a semiconductor epitaxial wafer 100 according to the present invention includes a first step of irradiating a semiconductor wafer 10 with cluster ions 16 to form a modifying layer 18 formed from a constituent element of the cluster ions 16 in a surface portion 10A of the semiconductor wafer; and a second step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer 10.

摘要翻译： 本发明提供了一种更有效地制造半导体外延晶片的方法，其可以通过实现更高的吸杂能力来抑制金属污染。 根据本发明的制造半导体外延晶片100的方法包括：第一步骤，用聚簇离子16照射半导体晶片10，以形成由簇离子16的构成元素形成的改性层18，该修饰层18在表面部分10A的 半导体晶片; 以及在半导体晶片10的改性层18上形成外延层20的第二步骤。

公开(公告)号：US08357592B2

公开(公告)日：2013-01-22

申请号：US12787750

申请日：2010-05-26

申请人： Kazunari Kurita

发明人： Kazunari Kurita

IPC分类号： H01L21/332

CPC分类号： H01L21/3225 ,  B23K26/0006 ,  B23K26/0624 ,  B23K2103/56 ,  H01L21/268

摘要： A method for manufacturing a semiconductor substrate dedicated to a semiconductor device, in which multi-photon absorption is generated in a micro-region inside the semiconductor substrate by condensing laser beams in any micro-region inside the semiconductor substrate, and a gettering sink is formed by changing the crystal structure of only the micro-region.

摘要翻译： 制造专用于半导体器件的半导体衬底的方法，其中通过在半导体衬底内的任何微区域聚焦激光束和吸气槽来形成在半导体衬底内的微区域中产生多光子吸收的方法 通过改变仅微区的晶体结构。

公开(公告)号：US08101508B2

公开(公告)日：2012-01-24

申请号：US12396656

申请日：2009-03-03

申请人： Kazunari Kurita ,  Shuichi Omote

发明人： Kazunari Kurita ,  Shuichi Omote

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： C30B29/06 ,  C30B15/00 ,  H01L21/3221 ,  H01L27/146

摘要： A silicon substrate is manufactured from a single crystal silicon that is doped with phosphorus (P) and is grown by a CZ method to have a predetermined carbon concentration and a predetermined initial oxygen concentration. An n+ epitaxial layer or an n+ implantation layer that is doped with phosphorus (P) at a predetermined concentration or more is formed on the silicon substrate. An n epitaxial layer that is doped with phosphorus (P) at a predetermined concentration is formed on the n+ layer.

摘要翻译： 硅衬底由掺杂有磷（P）的单晶硅制造，并且通过CZ方法生长以具有预定的碳浓度和预定的初始氧浓度。 在硅衬底上形成掺杂有预定浓度以上的磷（P）的n +外延层或n +注入层。 在n +层上形成以预定浓度掺杂有磷（P）的n外延层。

公开(公告)号：US20110300371A1

公开(公告)日：2011-12-08

申请号：US13099033

申请日：2011-05-02

申请人： Shuichi Omote ,  Kazunari Kurita

发明人： Shuichi Omote ,  Kazunari Kurita

IPC分类号： C30B33/02 ,  B32B5/16

CPC分类号： H01L21/3225 ,  H01L21/3221 ,  Y10T428/25

摘要： [Problem] An object of the present invention is to provide an epitaxial substrate and a method for producing the same capable of suppressing metal contamination and thereby reducing occurrence of white defects of a solid state imaging sensor by maintaining sufficient gettering capability during a device manufacturing process.[Solving Means] The present invention is a method of producing an epitaxial substrate, comprising a step of growing an epitaxial layer on a silicon substrate containing carbon as a dopant to form an epitaxial substrate; and, after the formation of the epitaxial substrate, a step of applying a first thermal treatment and a second thermal treatment to the epitaxial substrate such that a density of oxygen precipitates in a surface layer of the silicon substrate constituting the epitaxial substrate is larger than a density of oxygen precipitates at a center of the silicon substrate in a thickness direction.

摘要翻译： 本发明的目的是提供一种外延基板及其制造方法，能够抑制金属污染，从而通过在器件制造过程中保持足够的吸气能力来减少固态成像传感器的白色缺陷的发生 。 本发明是一种制造外延衬底的方法，包括在含有碳作为掺杂剂的硅衬底上生长外延层以形成外延衬底的步骤; 并且在形成外延衬底之后，对外延衬底施加第一热处理和第二热处理以使构成外延衬底的硅衬底的表层中的氧沉淀密度大于 氧浓度在硅衬底的中心厚度方向沉淀。