发明申请
- 专利标题: SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
- 专利标题(中): 半导体集成电路设备
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申请号: US12352668申请日: 2009-01-13
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公开(公告)号: US20090122602A1公开(公告)日: 2009-05-14
- 发明人: RIICHIRO TAKEMURA , Takeshi Sakata , Norikatsu Takaura , Kazuhiko Kajigaya
- 申请人: RIICHIRO TAKEMURA , Takeshi Sakata , Norikatsu Takaura , Kazuhiko Kajigaya
- 专利权人: HITACHI, LTD.,ELPIDA MEMORY, INC.
- 当前专利权人: HITACHI, LTD.,ELPIDA MEMORY, INC.
- 优先权: JP2003-398398 20031128
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C8/08 ; G11C7/00
摘要:
There is achieved a high-integrated and high-speed nonvolatile memory which can stabilize an operation of a phase-change memory for a short operation cycle time. A latch is provided in a write driver. A change to a high-resistance state of a phase-change element is performed per column cycle by a write-enable signal, and a change to a low-resistance state thereof is performed after a pre-charge command is inputted and concurrently with deactivation of a pre-charge signal. Thereby, a write time to a memory cell in which phase-change resistance is changed to a low-resistance state, and a period from a write operation for changing the phase-change resistance to a high-resistance state to a read operation to the above memory cell can be lengthened without extending the column cycle time, so that the stable write operation is achieved.
公开/授权文献
- US07613038B2 Semiconductor integrated circuit device 公开/授权日:2009-11-03
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