发明申请
- 专利标题： METHOD OF MANUFACTURING NANOWIRES PARALLEL TO THE SUPPORTING SUBSTRATE
- 专利标题（中）： 将纳米尺寸平行于支撑基板的方法
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申请号： US12267431申请日： 2008-11-07
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公开(公告)号： US20090124050A1公开(公告)日： 2009-05-14
- 发明人: Erwan Dornel , Jean-Charles Barbe , Thomas Ernst
- 申请人： Erwan Dornel , Jean-Charles Barbe , Thomas Ernst
- 申请人地址： FR Paris
- 专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE
- 当前专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE
- 当前专利权人地址： FR Paris
- 优先权： FR0758933 20071109
- 主分类号： H01L21/335
- IPC分类号： H01L21/335 ; H01L21/20
摘要：
A method of manufacturing at least one nanowire, the nanowire being parallel to its supporting substrate, the method comprising: the formation on the supporting substrate of a structure comprising a bar and two regions, a first end of the bar being secured to one of the two regions and a second end of the bar being secured to the other region, the width of the bar being less than the width of the regions, the subjection of the bar to an annealing under gaseous atmosphere in order to transform the bar into a nanowire, the annealing being carried out under conditions allowing control of the sizing of the neck produced during the formation of the nanowire.
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