发明申请
- 专利标题: LUMINESCENCE DIODE CHIP WITH CURRENT SPREADING LAYER AND METHOD FOR PRODUCING THE SAME
- 专利标题(中): 具有电流扩展层的发光二极管芯片及其制造方法
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申请号: US12158474申请日: 2006-11-21
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公开(公告)号: US20090127580A1公开(公告)日: 2009-05-21
- 发明人: Berthold Hahn , Ralph Wirth , Tony Albrecht , Magnus Ahlstedt , Stefan Illek , Klaus Streubel
- 申请人: Berthold Hahn , Ralph Wirth , Tony Albrecht , Magnus Ahlstedt , Stefan Illek , Klaus Streubel
- 申请人地址: DE
- 专利权人: OSRAM OPTO SEMICONDUCTORS GMBH
- 当前专利权人: OSRAM OPTO SEMICONDUCTORS GMBH
- 当前专利权人地址: DE
- 优先权: DE102005061797.2 20051223
- 国际申请: PCT/DE2006/002046 WO 20061121
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L21/3205
摘要:
An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.
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