公开(公告)号：US08017953B2

公开(公告)日：2011-09-13

申请号：US12158474

申请日：2006-11-21

申请人： Berthold Hahn ,  Ralph Wirth ,  Tony Albrecht ,  Magnus Ahlstedt ,  Stefan Illek ,  Klaus Streubel

发明人： Berthold Hahn ,  Ralph Wirth ,  Tony Albrecht ,  Magnus Ahlstedt ,  Stefan Illek ,  Klaus Streubel

IPC分类号： H01L27/15

CPC分类号： H01L33/145 ,  H01L33/42

摘要： An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.

摘要翻译： 指定包括至少一个电流屏障的LED芯片。 电流屏障适合于通过减小的电流密度选择性地防止或减少由电连接器主体横向覆盖的区域中的辐射的产生。 电流扩散层含有至少一种TCO（透明导电氧化物）。 在特别优选的实施例中，包含至少一个电流屏障，其包括外延半导体层序列的材料，电流扩展层的材料和/或半导体层序列和电流扩展层之间的界面。 还指定了用于制造LED芯片的方法。

公开(公告)号：US20090262773A1

公开(公告)日：2009-10-22

申请号：US11992706

申请日：2006-09-14

申请人： Magnus Ahlstedt ,  Dieter Eissler ,  Robert Walter ,  Ralph Wirth

发明人： Magnus Ahlstedt ,  Dieter Eissler ,  Robert Walter ,  Ralph Wirth

IPC分类号： H01S5/042 ,  H01L33/00 ,  H01L31/0224 ,  H01L21/02 ,  H01L21/00

CPC分类号： H01L31/022466 ,  H01L31/103 ,  H01L31/1884 ,  H01L33/0095 ,  H01L33/42 ,  H01L2224/48463 ,  H01S5/0421 ,  Y02E10/50

摘要： An optoelectronic semiconductor component comprising a semiconductor body (10) and a current spreading layer (3) is specified. The current spreading layer (3) is applied to the semiconductor body (10) at least in places. In this case, the current spreading layer (3) contains a metal (1) that forms a transparent electrically conductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from that side of the current spreading layer (3) which faces the semiconductor body (10) toward that side of said current spreading layer which is remote from the semiconductor body (10). A method for producing such a semiconductor component is also disclosed.

摘要翻译： 规定了包括半导体本体（10）和电流扩展层（3）的光电半导体部件。 至少在某个地方将电流扩展层（3）施加到半导体本体（10）。 在这种情况下，电流扩散层（3）包含在电流扩散层中形成透明导电金属氧化物（2）的金属（1），并且金属（1）的浓度（x）从该侧减小 （10）面向半导体本体（10）的电流扩展层（3）的电流扩散层（3）的电流扩展层（5）。 还公开了一种用于制造这种半导体部件的方法。

公开(公告)号：US08796714B2

公开(公告)日：2014-08-05

申请号：US13263789

申请日：2010-03-25

申请人： Vincent Grolier ,  Magnus Ahlstedt ,  Mikael Ahlstedt ,  Dieter Eissler

发明人： Vincent Grolier ,  Magnus Ahlstedt ,  Mikael Ahlstedt ,  Dieter Eissler

IPC分类号： H01L33/00 ,  H01L27/14 ,  H01L31/0232 ,  H01L31/0203 ,  H01L27/146

CPC分类号： H01L33/486 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.

摘要翻译： 发光二极管包括：半导体本体，其包括产生辐射的有源区;载体，其固定在半导体本体的上侧上的半导体本体;载体，包括由陶瓷发光转换材料构成的发光转换材料， 在半导体本体的远离上侧的半导体本体上施加到半导体本体的镜面层，以及两个接触层，接触层的第一接触层与半导体本体的n导电区域导电连接，第二接触 所述接触层的电极导电地连接到所述半导体主体的p导电区域。

公开(公告)号：US20110198639A1

公开(公告)日：2011-08-18

申请号：US12811030

申请日：2008-12-19

申请人： Franz Eberhard ,  Reiner Windisch ,  Robert Walter ,  Michael Schmal ,  Magnus Ahlstedt

发明人： Franz Eberhard ,  Reiner Windisch ,  Robert Walter ,  Michael Schmal ,  Magnus Ahlstedt

IPC分类号： H01L33/10 ,  H01L33/22

CPC分类号： H01L33/22 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radiation-emitting body comprising a layer sequence, having an active layer (10) for generating electromagnetic radiation, having a reflection layer (50), which reflects the generated radiation, and having at least one intermediate layer (40) arranged between the active layer (10) and the reflection layer (50). In this case, the active layer (10) has a roughening on an interface (15) directed toward the reflection layer (50), and the reflection layer (50) is substantially planar at an interface (45) directed toward the active layer (10). Also disclosed is a method for producing a radiation-emitting body, which involves forming a layer sequence on a substrate having an active layer (10) for generating electromagnetic radiation. In this case, the method comprises roughening an interface (15) on the active layer (10), and forming at least one intermediate layer (40) and a reflection layer (50).

摘要翻译： 一种辐射发射体，包括具有产生电磁辐射的有源层（10）的层序列，具有反射层（50），其反射所产生的辐射，并且具有至少一个中间层（40） 层（10）和反射层（50）。 在这种情况下，有源层（10）在指向反射层（50）的界面（15）上具有粗糙化，并且反射层（50）在指向有源层的界面（45）处基本上是平面的（ 10）。 还公开了一种用于制造辐射发射体的方法，其涉及在具有用于产生电磁辐射的有源层（10）的衬底上形成层序列。 在这种情况下，该方法包括粗糙化有源层（10）上的界面（15），并形成至少一个中间层（40）和反射层（50）。

公开(公告)号：US08501513B2

公开(公告)日：2013-08-06

申请号：US11992706

申请日：2006-09-14

申请人： Magnus Ahlstedt ,  Dieter Eissler ,  Robert Walter ,  Ralph Wirth

发明人： Magnus Ahlstedt ,  Dieter Eissler ,  Robert Walter ,  Ralph Wirth

IPC分类号： H01L33/00

CPC分类号： H01L31/022466 ,  H01L31/103 ,  H01L31/1884 ,  H01L33/0095 ,  H01L33/42 ,  H01L2224/48463 ,  H01S5/0421 ,  Y02E10/50

摘要： An optoelectronic semiconductor component comprising a semiconductor body (10) and a current spreading layer (3) is specified. The current spreading layer (3) is applied to the semiconductor body (10) at least in places. In this case, the current spreading layer (3) contains a metal (1) that forms a transparent electrically conductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from that side of the current spreading layer (3) which faces the semiconductor body (10) toward that side of said current spreading layer which is remote from the semiconductor body (10). A method for producing such a semiconductor component is also disclosed.

摘要翻译： 规定了包括半导体本体（10）和电流扩展层（3）的光电半导体部件。 至少在某个地方将电流扩展层（3）施加到半导体本体（10）。 在这种情况下，电流扩散层（3）包含在电流扩散层中形成透明导电金属氧化物（2）的金属（1），并且金属（1）的浓度（x）从该侧减小 （10）面向半导体本体（10）的电流扩展层（3）的电流扩散层（3）的电流扩展层（5）。 还公开了一种用于制造这种半导体部件的方法。

公开(公告)号：US20120112226A1

公开(公告)日：2012-05-10

申请号：US13263789

申请日：2010-03-25

申请人： Vincent Grolier ,  Magnus Ahlstedt ,  Mikael Ahlstedt ,  Dieter Eissler

发明人： Vincent Grolier ,  Magnus Ahlstedt ,  Mikael Ahlstedt ,  Dieter Eissler

IPC分类号： H01L33/50 ,  H01L33/60

CPC分类号： H01L33/486 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.

摘要翻译： 发光二极管包括：半导体本体，其包括产生辐射的有源区;载体，其固定在半导体本体的上侧上的半导体本体;载体，包括由陶瓷发光转换材料构成的发光转换材料， 在半导体本体的远离上侧的半导体本体上施加到半导体本体的镜面层，以及两个接触层，接触层的第一接触层与半导体本体的n导电区域导电连接，第二接触 所述接触层的电极导电地连接到所述半导体主体的p导电区域。

公开(公告)号：US07981712B2

公开(公告)日：2011-07-19

申请号：US12011458

申请日：2008-01-25

申请人： Magnus Ahlstedt ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

发明人： Magnus Ahlstedt ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

IPC分类号： H01L21/00 ,  H01L29/22 ,  H01L21/28 ,  H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L33/0079 ,  H01L33/16

摘要： A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.

摘要翻译： 规定了基于氮化物半导体系统的光电子半导体芯片的制造方法。 该方法包括以下步骤：形成具有至少一个p掺杂区域的半导体部分; 以及在所述半导体芯片的生长方向上形成设置在所述半导体部分的下游的覆盖层，所述覆盖层具有至少一个n掺杂半导体层。 在形成覆盖层之前或期间，实现适合于电激活p掺杂区域的活化步骤。 另外规定了可以通过该方法制造的光电子半导体芯片。

公开(公告)号：US09806223B2

公开(公告)日：2017-10-31

申请号：US12985903

申请日：2011-01-06

申请人： Magnus Ahlstedt ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

发明人： Magnus Ahlstedt ,  Lutz Höppel ,  Matthias Peter ,  Matthias Sabathil ,  Uwe Strauss ,  Martin Strassburg

IPC分类号： H01L33/32 ,  H01L33/42 ,  H01L33/00 ,  H01L21/02 ,  H01L33/16

CPC分类号： H01L33/0075 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L33/0079 ,  H01L33/16

摘要： A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.

公开(公告)号：US09029902B2

公开(公告)日：2015-05-12

申请号：US13880768

申请日：2011-09-27

申请人： Magnus Ahlstedt ,  Johann Ramchen

发明人： Magnus Ahlstedt ,  Johann Ramchen

IPC分类号： H01L33/00 ,  H01L31/036 ,  H01L27/12 ,  H01L21/00 ,  H01L33/62

CPC分类号： H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a radiation-emitting semiconductor chip, a carrier substrate and a film. The carrier substrate has electrically conductive contact tracks on a top side. The film is arranged on a radiation exit side of the chip, the radiation exit side being remote from the carrier substrate, and on the top side of the carrier substrate and has electrically conductive first conductor tracks. The film has perforations arranged such that the semiconductor chip can be electrically contact-connected to the first contact track of the carrier substrate via the first conductor track of the film.

摘要翻译： 半导体器件包括发射辐射的半导体芯片，载体衬底和膜。 载体基板在顶侧具有导电接触轨迹。 薄膜布置在芯片的辐射出口侧，辐射出射侧远离载体衬底，并且在载体衬底的顶侧上并具有导电的第一导体轨迹。 薄膜具有穿孔，其布置成使得半导体芯片可以经由薄膜的第一导体轨迹与载体基板的第一接触轨迹电接触连接。

公开(公告)号：US08772804B2

公开(公告)日：2014-07-08

申请号：US12920311

申请日：2009-02-11

申请人： Magnus Ahlstedt ,  Johannes Baur ,  Ulrich Zehnder ,  Martin Strassburg ,  Matthias Sabathil ,  Berthold Hahn

发明人： Magnus Ahlstedt ,  Johannes Baur ,  Ulrich Zehnder ,  Martin Strassburg ,  Matthias Sabathil ,  Berthold Hahn

IPC分类号： H01L33/00 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46

CPC分类号： H01L33/405 ,  H01L33/42 ,  H01L33/46

摘要： A semiconductor light-emitting diode (10) is proposed having at least one p-doped light-emitting diode layer (4), an n-doped light-emitting diode layer (2) and an optically active zone (3) between the p-doped light-emitting diode layer (4) and the n-doped light-emitting diode layer (2), having an oxide layer (8) consisting of a transparent conductive oxide, and having at least one mirror layer (9), wherein the oxide layer (8) is disposed between the light-emitting diode layers (2, 4) and the at least one mirror layer (9), and comprises a first boundary surface (8a) which faces the light-emitting diode layers (2, 4) and a second boundary surface (8b) which faces the at least one mirror layer (9), and wherein the second boundary surface (8b) of the oxide layer (8) has less roughness (R2) than the first boundary surface (8a) of the oxide layer (8).

摘要翻译： 提出了一种半导体发光二极管（10），其具有至少一个p掺杂发光二极管层（4），n掺杂发光二极管层（2）和光学活性区域（3） 掺杂的发光二极管层（4）和n掺杂发光二极管层（2），具有由透明导电氧化物构成的氧化物层（8），并且具有至少一个镜层（9），其中 氧化物层（8）设置在发光二极管层（2,4）和至少一个镜层（9）之间，并且包括面对发光二极管层（2）的第一边界面（8a） ，4）和面向所述至少一个镜层（9）的第二边界面（8b），并且其中所述氧化物层（8）的所述第二边界面（8b）具有比所述第一边界面 （8a）的氧化物层（8a）。