发明申请
US20090127661A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
审中-公开
氮化物半导体器件及其制造方法
- 专利标题: NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 氮化物半导体器件及其制造方法
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申请号: US12271946申请日: 2008-11-17
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公开(公告)号: US20090127661A1公开(公告)日: 2009-05-21
- 发明人: Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Hiroshi Kurokawa , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
- 申请人: Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Hiroshi Kurokawa , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
- 申请人地址: JP Tokyo
- 专利权人: MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人: MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-300004 20071120
- 主分类号: H01L29/20
- IPC分类号: H01L29/20 ; H01L21/31
摘要:
Semiconductor devices, in particular nitride semiconductor devices for use in the manufacture of laser diodes, prevent peeling-off of the electrode, and at the same time reduces the complexity of processes and a reduction in yield. A nitride semiconductor device according to the invention includes a P-type nitride semiconductor layer with a ridge on its surface, an SiO2 film covering at least the side face of the ridge, an adherence layer formed on a surface of the SiO2 film and composed mainly of silicon, and a P-type electrode formed on the upper surface of the ridge and on a surface of the adherence layer.