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公开(公告)号：US20090127661A1
公开(公告)日：2009-05-21
申请号：US12271946
申请日：2008-11-17
申请人： Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Hiroshi Kurokawa , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
发明人： Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Hiroshi Kurokawa , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
CPC分类号： H01S5/32341 , H01S5/0425 , H01S5/22 , H01S2301/173
摘要： Semiconductor devices, in particular nitride semiconductor devices for use in the manufacture of laser diodes, prevent peeling-off of the electrode, and at the same time reduces the complexity of processes and a reduction in yield. A nitride semiconductor device according to the invention includes a P-type nitride semiconductor layer with a ridge on its surface, an SiO2 film covering at least the side face of the ridge, an adherence layer formed on a surface of the SiO2 film and composed mainly of silicon, and a P-type electrode formed on the upper surface of the ridge and on a surface of the adherence layer.
摘要翻译： 半导体器件，特别是用于制造激光二极管的氮化物半导体器件，防止电极剥离，并且同时降低了工艺的复杂性和产量的降低。 根据本发明的氮化物半导体器件包括其表面上具有脊的P型氮化物半导体层，至少覆盖脊的侧面的SiO 2膜，形成在SiO 2膜的表面上并且主要组成的粘附层 的硅，以及形成在脊的上表面上和粘附层的表面上的P型电极。
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公开(公告)号：US07791097B2
公开(公告)日：2010-09-07
申请号：US11772644
申请日：2007-07-02
申请人： Kyozo Kanamoto , Katsuomi Shiozawa , Kazushige Kawasaki , Hitoshi Sakuma , Junichi Horie , Toshihiko Shiga , Toshiyuki Oishi
发明人： Kyozo Kanamoto , Katsuomi Shiozawa , Kazushige Kawasaki , Hitoshi Sakuma , Junichi Horie , Toshihiko Shiga , Toshiyuki Oishi
IPC分类号： H01L29/207 , H01L21/20
CPC分类号： H01S5/22 , H01L33/0095 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/32341 , H01S2301/173 , H01S2304/00
摘要： A nitride semiconductor device includes an n-type GaN substrate with a semiconductor device formed thereon and an n-type electrode which is a metal electrode formed on the rear surface of the GaN substrate. A surface modified layer and a reaction layer are interposed between the GaN substrate and n-type electrode. The surface modified layer serves as a carrier supplying layer, and is formed by causing the rear surface of the GaN substrate to react with a Si-containing plasma to be modified. The reaction layer is generated by partially removing a deposited material deposited on the surface modified layer by cleaning to generate a deposited layer and then causing Ti contained in a first metal layer and the deposited layer to partially react by heat treatment.
摘要翻译： 氮化物半导体器件包括其上形成有半导体器件的n型GaN衬底和形成在GaN衬底的背面上的作为金属电极的n型电极。 在GaN衬底和n型电极之间插入表面改性层和反应层。 表面改性层用作载体供给层，并且通过使GaN衬底的后表面与待改性的含Si等离子体反应而形成。 反应层是通过清洗部分除去沉积在表面改性层上的沉积材料产生沉积层，然后使包含在第一金属层中的Ti和沉积层通过热处理部分地反应而产生的。
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公开(公告)号：US20080023799A1
公开(公告)日：2008-01-31
申请号：US11772644
申请日：2007-07-02
申请人： Kyozo KANAMOTO , Katsuomi Shiozawa , Kazushige Kawasaki , Hitoshi Sakuma , Junichi Horie , Toshihiko Shiga , Toshiyuki Oishi
发明人： Kyozo KANAMOTO , Katsuomi Shiozawa , Kazushige Kawasaki , Hitoshi Sakuma , Junichi Horie , Toshihiko Shiga , Toshiyuki Oishi
IPC分类号： H01L29/207 , H01L21/20
CPC分类号： H01S5/22 , H01L33/0095 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/32341 , H01S2301/173 , H01S2304/00
摘要： A nitride semiconductor device includes an n-type GaN substrate with a semiconductor device formed thereon and an n-type electrode which is a metal electrode formed on the rear surface of the GaN substrate. A surface modified layer and a reaction layer are interposed between the GaN substrate and n-type electrode. The surface modified layer serves as a carrier supplying layer, and is formed by causing the rear surface of the GaN substrate to react with a Si-containing plasma to be modified. The reaction layer is generated by partially removing a deposited material deposited on the surface modified layer by cleaning to generate a deposited layer and then causing Ti contained in a first metal layer and the deposited layer to partially react by heat treatment.
摘要翻译： 氮化物半导体器件包括其上形成有半导体器件的n型GaN衬底和形成在GaN衬底的背面上的作为金属电极的n型电极。 在GaN衬底和n型电极之间插入表面改性层和反应层。 表面改性层用作载体供给层，并且通过使GaN衬底的后表面与待改性的含Si等离子体反应而形成。 反应层是通过清洗部分除去沉积在表面改性层上的沉积材料产生沉积层，然后使包含在第一金属层中的Ti和沉积层通过热处理部分地反应而产生的。
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公开(公告)号：US20090130790A1
公开(公告)日：2009-05-21
申请号：US12264976
申请日：2008-11-05
IPC分类号： H01L21/20
CPC分类号： H01S5/22 , B82Y20/00 , H01L33/32 , H01L33/40 , H01S5/0021 , H01S5/0425 , H01S5/2009 , H01S5/3213 , H01S5/34333 , H01S2301/173 , H01S2304/04
摘要： A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in an ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating.
摘要翻译： 一种氮化物半导体发光元件的制造方法，其特征在于，在基板上层叠n型氮化物半导体外延层，有源层和p型氮化物半导体外延层的半导体层叠结构体， 在p型氮化物半导体外延层上形成具有含有Pd的第一电极层和含有Ta的第二电极层的p型电极; 在形成p型电极之后，在含有氧的环境中，在400℃和600℃之间的温度下进行热处理; 在热处理后，在p型电极上形成含有Au的焊盘电极。
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公开(公告)号：US07964424B2
公开(公告)日：2011-06-21
申请号：US12264976
申请日：2008-11-05
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01L33/32 , H01L33/40 , H01S5/0021 , H01S5/0425 , H01S5/2009 , H01S5/3213 , H01S5/34333 , H01S2301/173 , H01S2304/04
摘要： A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating.
摘要翻译： 一种氮化物半导体发光元件的制造方法，其特征在于，在基板上层叠有n型氮化物半导体外延层，有源层和p型氮化物半导体外延层的半导体层叠结构体， 在p型氮化物半导体外延层上形成具有含有Pd的第一电极层和含有Ta的第二电极层的p型电极; 在形成p型电极之后，在含有氧的环境中，在400℃和600℃之间的温度下进行热处理; 在热处理后，在p型电极上形成含有Au的焊盘电极。
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公开(公告)号：US20070231978A1
公开(公告)日：2007-10-04
申请号：US11691049
申请日：2007-03-26
IPC分类号： H01L21/84
CPC分类号： H01S5/0425 , H01S5/0206 , H01S5/0421 , H01S5/22 , H01S5/32341
摘要： A nitride semiconductor device and its manufacturing method are provided which are capable of achieving low-resistance ohmic properties and high adhesion. A nitride semiconductor device has an n-type GaN substrate over which a semiconductor element is formed and an n-electrode as a metal electrode formed over the back surface of the GaN substrate. A surface denatured layer functioning as a carrier supply layer is provided between the GaN substrate and the n-electrode. The surface denatured layer is formed by denaturing the back surface of the GaN substrate by causing it to react with a material that contains silicon.
摘要翻译： 提供了能够实现低电阻欧姆特性和高粘合性的氮化物半导体器件及其制造方法。 氮化物半导体器件具有形成半导体元件的n型GaN衬底和形成在GaN衬底的背面上的作为金属电极的n电极。 用作载体供给层的表面变性层设置在GaN衬底和n电极之间。 表面变性层通过使其与含有硅的材料反应而使GaN衬底的背面变性而形成。
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公开(公告)号：US20080211062A1
公开(公告)日：2008-09-04
申请号：US11681235
申请日：2007-03-02
IPC分类号： H01L29/20 , H01L21/20 , H01L21/283
摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (20) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要翻译： 提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。 氮化物半导体器件包括在其上形成半导体元件的n型GaN衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。 在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（20）由除氮化物半导体之外并且包含硅的材料构成。
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8.发明申请NITRIDE SEMICONDUCTOR DEVICE HAVING A SILICON-CONTAINING LAYER AND MANUFACTURING METHOD THEREOF 有权具有含硅层的氮化物半导体器件及其制造方法公开(公告)号：US20100129991A1
公开(公告)日：2010-05-27
申请号：US12641421
申请日：2009-12-18
IPC分类号： H01L21/20
摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga—N substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (2) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要翻译： 提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。 氮化物半导体器件包括形成半导体元件的n型Ga-N衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。 在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（2）由不同于氮化物半导体并且包含硅的材料构成。
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9.发明授权公开(公告)号：US07683398B2
公开(公告)日：2010-03-23
申请号：US11681235
申请日：2007-03-02
IPC分类号： H01L31/072 , H01L29/24 , H01L29/06
摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (20) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要翻译： 提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。 氮化物半导体器件包括在其上形成半导体元件的n型GaN衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。 在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（20）由除氮化物半导体之外并且包含硅的材料构成。
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10.发明授权Nitride semiconductor device having a silicon-containing layer and manufacturing method thereof 有权具有含硅层的氮化物半导体器件及其制造方法公开(公告)号：US08163576B2
公开(公告)日：2012-04-24
申请号：US12641421
申请日：2009-12-18
IPC分类号： H01L21/00
摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga—N substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (2) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要翻译： 提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。 氮化物半导体器件包括形成半导体元件的n型Ga-N衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。 在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（2）由不同于氮化物半导体并且包含硅的材料构成。
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