发明申请
- 专利标题： Through Substrate Via Semiconductor Components
- 专利标题（中）： 通过基板通过半导体元件
-
申请号： US11944846申请日： 2007-11-26
-
公开(公告)号： US20090134497A1公开(公告)日： 2009-05-28
- 发明人: Hans-Joachim Barth , Jens Pohl
- 申请人： Hans-Joachim Barth , Jens Pohl
- 主分类号： H01L29/417
- IPC分类号： H01L29/417 ; H01L21/441
摘要：
A structure and method of forming landing pads for through substrate vias in forming stacked semiconductor components are described. In various embodiments, the current invention describes landing pad structures that includes multiple levels of conductive plates connected by vias such that the electrical connection between a through substrate etch and landing pad is independent of the location of the bottom of the through substrate trench.
公开/授权文献
- US07786584B2 Through substrate via semiconductor components 公开/授权日：2010-08-31
信息查询
IPC分类:
