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公开(公告)号：US08889548B2
公开(公告)日：2014-11-18
申请号：US13084105
申请日：2011-04-11
IPC分类号： H01L29/72 , H01L23/552 , H01L21/768 , H01L23/48 , H01L23/66
CPC分类号： H01L21/76898 , H01L21/3065 , H01L21/308 , H01L21/76879 , H01L23/481 , H01L23/552 , H01L23/66 , H01L2223/6688 , H01L2224/02372 , H01L2224/0401 , H01L2224/05008 , H01L2224/05569 , H01L2924/00014 , H01L2224/05552
摘要： Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, a method of fabricating the system on chip includes forming a through substrate opening from a back surface of a substrate, the through substrate opening disposed between a first and a second region, the first region comprising devices for RF circuitry and the second region comprising devices for other circuitry. The method further includes forming patterns for redistribution lines on a photo resist layer, the photo resist layer disposed under the back surface, and filling the through substrate opening and the patterns for redistribution lines with a conductive material.
摘要翻译： 公开了一种片上系统的结构以及片上系统的形成方法。 在一个实施例中，一种制造片上系统的方法包括从衬底的背面形成穿透衬底开口，穿过衬底开口设置在第一和第二区域之间，第一区域包括用于RF电路的装置，第二区域包括第二 区域包括用于其他电路的装置。 该方法还包括在光致抗蚀剂层上形成用于再分配线的图案，设置在背面下方的光致抗蚀剂层，以及用导电材料填充贯通基板开口和再分布线图案。
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公开(公告)号：US20090134497A1
公开(公告)日：2009-05-28
申请号：US11944846
申请日：2007-11-26
申请人： Hans-Joachim Barth , Jens Pohl
发明人： Hans-Joachim Barth , Jens Pohl
IPC分类号： H01L29/417 , H01L21/441
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/0401 , H01L2224/0557 , H01L2224/13025 , H01L2224/131 , H01L2924/0002 , H01L2924/014 , H01L2224/05552
摘要： A structure and method of forming landing pads for through substrate vias in forming stacked semiconductor components are described. In various embodiments, the current invention describes landing pad structures that includes multiple levels of conductive plates connected by vias such that the electrical connection between a through substrate etch and landing pad is independent of the location of the bottom of the through substrate trench.
摘要翻译： 描述了在形成堆叠的半导体部件中形成通过衬底通孔的着陆焊盘的结构和方法。 在各种实施例中，本发明描述着陆焊盘结构，其包括通过通孔连接的多层导电板，使得贯穿衬底蚀刻和着陆焊盘之间的电连接独立于贯穿衬底沟槽的底部的位置。
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公开(公告)号：US08330274B2
公开(公告)日：2012-12-11
申请号：US12893009
申请日：2010-09-29
申请人： Hans-Joachim Barth , Gottfried Beer , Joern Plagmann , Jens Pohl , Werner Robl , Rainer Steiner , Mathias Vaupel
发明人： Hans-Joachim Barth , Gottfried Beer , Joern Plagmann , Jens Pohl , Werner Robl , Rainer Steiner , Mathias Vaupel
IPC分类号： H01L23/48
CPC分类号： H01L21/76843 , H01L21/76807 , H01L21/76879 , H01L23/49816 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/53266 , H01L24/03 , H01L24/10 , H01L24/13 , H01L2224/0401 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01042 , H01L2924/01044 , H01L2924/01047 , H01L2924/0105 , H01L2924/0106 , H01L2924/01068 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/15788 , H01L2924/00
摘要： One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a seed layer over the barrier layer; forming an inhibitor layer over the seed layer; removing a portion of said inhibitor layer to expose a portion of the seed layer; and selectively depositing a fill layer on the exposed seed layer.
摘要翻译： 一个或多个实施例涉及一种形成半导体结构的方法，包括：提供工件; 在工件上形成阻挡层; 在阻挡层上形成种子层; 在种子层上形成抑制层; 去除所述抑制剂层的一部分以暴露所述种子层的一部分; 并且在曝光的种子层上选择性地沉积填充层。
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公开(公告)号：US08169059B2
公开(公告)日：2012-05-01
申请号：US12242521
申请日：2008-09-30
申请人： Hans-Joachim Barth , Jens Pohl , Gottfried Beer , Oliver Nagy
发明人： Hans-Joachim Barth , Jens Pohl , Gottfried Beer , Oliver Nagy
IPC分类号： H01L23/552
CPC分类号： H01L21/76898 , H01L23/481 , H01L23/552 , H01L23/585 , H01L23/66 , H01L2924/0002 , H01L2924/00
摘要： Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, the system on a chip includes an RF component disposed on a first part of a substrate, a semiconductor component disposed on a second part of the substrate, the semiconductor component and the RF component sharing a common boundary. The system on chip further includes through substrate conductors disposed in the substrate, the through substrate conductors coupled to a ground potential node, the through substrate conductors disposed around the RF component forming a fence around the RF circuit.
摘要翻译： 公开了一种片上系统的结构以及片上系统的形成方法。 在一个实施例中，芯片上的系统包括设置在基板的第一部分上的RF部件，设置在基板的第二部分上的半导体部件，共享公共边界的半导体部件和RF部件。 芯片上的系统还包括通过设置在基板中的基板导体，连接到地电位节点的贯穿基板导体，围绕RF元件设置的贯穿基板导体，围绕RF电路形成围栏。
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公开(公告)号：US08148257B1
公开(公告)日：2012-04-03
申请号：US12894190
申请日：2010-09-30
申请人： Hans-Joachim Barth , Gottfried Beer , Joern Plagmann , Jens Pohl , Werner Robl , Rainer Steiner , Mathias Vaupel
发明人： Hans-Joachim Barth , Gottfried Beer , Joern Plagmann , Jens Pohl , Werner Robl , Rainer Steiner , Mathias Vaupel
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/469
CPC分类号： H01L23/53238 , H01L21/76846 , H01L21/76865 , H01L21/76873 , H01L21/76879 , H01L21/76885 , H01L23/53223 , H01L23/53252 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： One or more embodiments relate to a method of forming an electronic device, comprising: providing a workpiece; forming a first barrier layer over the workpiece; forming an intermediate conductive layer over the first barrier layer; forming a second barrier layer over the intermediate conductive layer; forming a seed layer over the second barrier layer; removing a portion of the seed layer to leave a remaining portion of the seed layer and to expose a portion of the second barrier layer; and electroplating a fill layer on the remaining portion of the seed layer.
摘要翻译： 一个或多个实施例涉及一种形成电子设备的方法，包括：提供工件; 在工件上形成第一阻挡层; 在所述第一阻挡层上形成中间导电层; 在所述中间导电层上形成第二阻挡层; 在所述第二阻挡层上形成种子层; 去除种子层的一部分以留下种子层的剩余部分并暴露第二阻挡层的一部分; 并在种子层的剩余部分上电镀填充层。
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公开(公告)号：US20110101532A1
公开(公告)日：2011-05-05
申请号：US12611609
申请日：2009-11-03
申请人： Jens Pohl , Hans-Joachim Barth , Gottfried Beer , Rainer Steiner , Werner Robl , Mathias Vaupel
发明人： Jens Pohl , Hans-Joachim Barth , Gottfried Beer , Rainer Steiner , Werner Robl , Mathias Vaupel
CPC分类号： H01L23/5389 , H01L21/486 , H01L21/76873 , H01L21/76879 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L24/82 , H01L24/97 , H01L2221/1089 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1461 , H01L2924/181 , H01L2224/82 , H01L2924/00
摘要： A method for fabricating a device includes providing a substrate including at least one contact and applying a dielectric layer over the substrate. The method includes applying a first seed layer over the dielectric layer, applying an inert layer over the seed layer, and structuring the inert layer, the first seed layer, and the dielectric layer to expose at least a portion of the contact. The method includes applying a second seed layer over exposed portions of the structured dielectric layer and the contact such that the second seed layer makes electrical contact with the structured first seed layer. The method includes electroplating a metal on the second seed layer.
摘要翻译： 一种用于制造器件的方法包括提供包括至少一个接触的衬底并在衬底上施加电介质层。 该方法包括在电介质层上施加第一种子层，在种子层上施加惰性层，以及构造惰性层，第一籽晶层和电介质层以暴露至少一部分接触。 该方法包括在结构化介电层和触点的暴露部分上施加第二种子层，使得第二籽晶层与结构化的第一籽晶层电接触。 该方法包括在第二种子层上电镀金属。
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公开(公告)号：US20100078776A1
公开(公告)日：2010-04-01
申请号：US12242487
申请日：2008-09-30
IPC分类号： H01L23/552 , H01L21/44
CPC分类号： H01L21/76898 , H01L23/3114 , H01L23/481 , H01L23/552 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/05569 , H01L2924/0002 , H01L2224/05552
摘要： Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, a method of fabricating the system on chip includes forming a through substrate opening from a back surface of a substrate, the through substrate opening disposed between a first and a second region, the first region comprising devices for RF circuitry and the second region comprising devices for other circuitry. The method further includes forming patterns for redistribution lines on a photo resist layer, the photo resist layer disposed under the back surface, and filling the through substrate opening and the patterns for redistribution lines with a conductive material.
摘要翻译： 公开了一种片上系统的结构以及片上系统的形成方法。 在一个实施例中，一种制造片上系统的方法包括从衬底的背面形成穿透衬底开口，穿过衬底开口设置在第一和第二区域之间，第一区域包括用于RF电路的装置，第二区域包括第二 区域包括用于其他电路的装置。 该方法还包括在光致抗蚀剂层上形成用于再分配线的图案，设置在背面下方的光致抗蚀剂层，以及用导电材料填充贯通基板开口和再分配线图案。
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公开(公告)号：US20120258594A1
公开(公告)日：2012-10-11
申请号：US13084105
申请日：2011-04-11
IPC分类号： H01L21/28
CPC分类号： H01L21/76898 , H01L21/3065 , H01L21/308 , H01L21/76879 , H01L23/481 , H01L23/552 , H01L23/66 , H01L2223/6688 , H01L2224/02372 , H01L2224/0401 , H01L2224/05008 , H01L2224/05569 , H01L2924/00014 , H01L2224/05552
摘要： Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, a method of fabricating the system on chip includes forming a through substrate opening from a back surface of a substrate, the through substrate opening disposed between a first and a second region, the first region comprising devices for RF circuitry and the second region comprising devices for other circuitry. The method further includes forming patterns for redistribution lines on a photo resist layer, the photo resist layer disposed under the back surface, and filling the through substrate opening and the patterns for redistribution lines with a conductive material.
摘要翻译： 公开了一种片上系统的结构以及片上系统的形成方法。 在一个实施例中，一种制造片上系统的方法包括从衬底的背面形成穿透衬底开口，穿过衬底开口设置在第一和第二区域之间，第一区域包括用于RF电路的装置，第二区域包括第二 区域包括用于其他电路的装置。 该方法还包括在光致抗蚀剂层上形成用于再分配线的图案，设置在背面下方的光致抗蚀剂层，以及用导电材料填充贯通基板开口和再分配线图案。
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公开(公告)号：US07936052B2
公开(公告)日：2011-05-03
申请号：US12242487
申请日：2008-09-30
IPC分类号： H01L29/72
CPC分类号： H01L21/76898 , H01L23/3114 , H01L23/481 , H01L23/552 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/05569 , H01L2924/0002 , H01L2224/05552
摘要： Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, a method of fabricating the system on chip includes forming a through substrate opening from a back surface of a substrate, the through substrate opening disposed between a first and a second region, the first region comprising devices for RF circuitry and the second region comprising devices for other circuitry. The method further includes forming patterns for redistribution lines on a photo resist layer, the photo resist layer disposed under the back surface, and filling the through substrate opening and the patterns for redistribution lines with a conductive material.
摘要翻译： 公开了一种片上系统的结构以及片上系统的形成方法。 在一个实施例中，一种制造片上系统的方法包括从衬底的背面形成穿透衬底开口，穿过衬底开口设置在第一和第二区域之间，第一区域包括用于RF电路的装置，第二区域包括第二 区域包括用于其他电路的装置。 该方法还包括在光致抗蚀剂层上形成用于再分配线的图案，设置在背面下方的光致抗蚀剂层，以及用导电材料填充贯通基板开口和再分配线图案。
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公开(公告)号：US07786584B2
公开(公告)日：2010-08-31
申请号：US11944846
申请日：2007-11-26
申请人： Hans-Joachim Barth , Jens Pohl
发明人： Hans-Joachim Barth , Jens Pohl
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/0401 , H01L2224/0557 , H01L2224/13025 , H01L2224/131 , H01L2924/0002 , H01L2924/014 , H01L2224/05552
摘要： A structure and method of forming landing pads for through substrate vias in forming stacked semiconductor components are described. In various embodiments, the current invention describes landing pad structures that includes multiple levels of conductive plates connected by vias such that the electrical connection between a through substrate etch and landing pad is independent of the location of the bottom of the through substrate trench.
摘要翻译： 描述了在形成堆叠的半导体部件中形成通过衬底通孔的着陆焊盘的结构和方法。 在各种实施例中，本发明描述着陆焊盘结构，其包括通过通孔连接的多层导电板，使得贯穿衬底蚀刻和着陆焊盘之间的电连接独立于贯穿衬底沟槽的底部的位置。
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