发明申请
- 专利标题： SEMICONDUCTOR APPARATUS
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申请号： US12273590申请日： 2008-11-19
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公开(公告)号： US20090134498A1公开(公告)日： 2009-05-28
- 发明人: Hiroaki IKEDA , Masakazu Ishino , Hideharu Miyake , Shiro Uchiyama , Yasuhiro Naka , Nae Hisano , Hisashi Tanie , Kunihiko Nishi , Hiroyuki Tenmei
- 申请人： Hiroaki IKEDA , Masakazu Ishino , Hideharu Miyake , Shiro Uchiyama , Yasuhiro Naka , Nae Hisano , Hisashi Tanie , Kunihiko Nishi , Hiroyuki Tenmei
- 申请人地址： JP Tokyo
- 专利权人： ELPIDA MEMORY, INC.
- 当前专利权人： ELPIDA MEMORY, INC.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-300155 20071120
- 主分类号： H01L23/538
- IPC分类号： H01L23/538 ; H01L23/52 ; H01L23/58
摘要：
The present invention includes a semiconductor element provided with an electrode passing through front and back sides. The electrode is formed as a cylinder including a hollow portion, and stress relaxing material is provided in the hollow portion, which is used to reduce stress that is induced between the semiconductor element and the electrode. The stress relaxing material is an elastic body made of resin material.
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