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发明申请
US20090137117A1 Method Forming Contact Plug for Semiconductor Device Using H2 Remote Plasma Treatment 有权
使用H2远程等离子体处理形成用于半导体器件的接触插塞的方法

Method Forming Contact Plug for Semiconductor Device Using H2 Remote Plasma Treatment
摘要：
Provided are methods of forming a contact plug of a semiconductor device. Methods of forming a contact plug of a semiconductor device may include forming an interlayer insulating layer on a semiconductor substrate on which a lower structure is formed, forming a contact hole in the interlayer insulating layer, the contact hole exposing the lower structure, and forming a W layer and then a WN layer to form a W/WN barrier layer in the contact hole. Methods may include H2 remote plasma treating the W/WN barrier layer, forming a W-plug on the H2 remote plasma treated W/WN barrier layer to fill the contact hole, and chemical mechanical polishing (CMP) the W-plug and then the W/WN barrier layer in order to expose the interlayer insulating layer.
摘要（中）：

提供了形成半导体器件的接触插塞的方法。 形成半导体器件的接触插塞的方法可以包括在其上形成下部结构的半导体衬底上形成层间绝缘层，在层间绝缘层中形成接触孔，暴露下部结构的接触孔，并形成 W层，然后形成WN层，以在接触孔中形成W / WN阻挡层。 方法可以包括H2远程等离子体处理W / WN阻挡层，在H2远程等离子体处理的W / WN阻挡层上形成W-塞以填充接触孔，以及化学机械抛光（CMP）W-塞，然后 W / WN阻挡层，以露出层间绝缘层。

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