发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12326392申请日： 2008-12-02
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公开(公告)号： US20090140327A1公开(公告)日： 2009-06-04
- 发明人: Takashi Hirao , Takayuki Hashimoto , Noboru Akiyama
- 申请人： Takashi Hirao , Takayuki Hashimoto , Noboru Akiyama
- 优先权： JPJP2007-312001 20071203
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
The vertical trench MOSFET comprises: an N type epitaxial region formed on an upper surface of an N+ type substrate having a drain electrode on a lower surface thereof; a gate trench extending from a front surface into the N type epitaxial region; a gate electrode positioned in the gate trench so as to interpose an insulator; a channel region formed on the N type epitaxial region; a source region formed on the channel region; a source electrode formed on the source region; a source trench extending from the front surface into the N type epitaxial region; and a trench-buried source electrode positioned in the source trench so as to interpose an insulator, wherein the source electrode contacts with the trench-buried source electrode.
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