发明申请
- 专利标题: Semiconductor integrated device and manufacturing method for the same
- 专利标题(中): 半导体集成器件及其制造方法相同
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申请号: US12314011申请日: 2008-12-02
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公开(公告)号: US20090140371A1公开(公告)日: 2009-06-04
- 发明人: Hitoshi Okamoto
- 申请人: Hitoshi Okamoto
- 申请人地址: JP Kawasaki
- 专利权人: NEC Electronics Corporation
- 当前专利权人: NEC Electronics Corporation
- 当前专利权人地址: JP Kawasaki
- 优先权: JP2007-313113 20071204; JP2008-298144 20081121
- 主分类号: H01L29/02
- IPC分类号: H01L29/02 ; H01L21/04
摘要:
A first exemplary aspect of an exemplary embodiment of the present invention is a semiconductor integrated device comprising a semiconductor substrate, a first impurity layer of a first conductivity type formed in the semiconductor substrate, a second impurity layer of a second conductivity type formed on the first impurity layer, a first well of the first conductivity type formed on the second impurity layer and supplied with potential from the first impurity layer via an impurity region of the first conductivity type selectively formed in a part of the second impurity layer, and a second well of the second conductivity type formed on the second impurity layer and supplied with potential from the second impurity layer, wherein the impurity concentrations of the first impurity layer and the impurity region are higher than that of the first well, and the impurity concentration of the second impurity layer is higher than that of the second well.
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