发明申请
- 专利标题： METHOD FOR PATTERNING A PHOTORESIST LAYER
- 专利标题（中）： 用于绘制光电层的方法
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申请号： US12106837申请日： 2008-04-21
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公开(公告)号： US20090142710A1公开(公告)日： 2009-06-04
- 发明人: Cheng-Hsuan Lin , Chao-Chun Huang , Fuh-Yu Chang
- 申请人： Cheng-Hsuan Lin , Chao-Chun Huang , Fuh-Yu Chang
- 申请人地址： TW HSINCHU
- 专利权人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人地址： TW HSINCHU
- 优先权： TWTW96145336 20071129
- 主分类号： G03F7/20
- IPC分类号： G03F7/20
摘要：
The disclosed is a method for patterning a photoresist layer. An object is provided, a photoresist layer is formed on the object, and an ink pattern is printed on the photoresist layer. Shielded by the ink pattern, the photoresist is exposed and developed to be patterned. In addition, a layered material is optionally formed between the object and the photoresist layer.
公开/授权文献
- US2175398A Hydraulically operated flow reversing valve 公开/授权日：1939-10-10
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