发明申请
- 专利标题： Fabrication of capacitive micromachined ultrasonic transducers by local oxidation
- 专利标题（中）： 通过局部氧化制造电容微机械超声换能器
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申请号： US12288009申请日： 2008-10-14
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公开(公告)号： US20090142872A1公开(公告)日： 2009-06-04
- 发明人: Kwan Kyu Park , Mario Kupnik , Butrus T. Khuri-Yakub
- 申请人： Kwan Kyu Park , Mario Kupnik , Butrus T. Khuri-Yakub
- 主分类号： H01L21/30
- IPC分类号： H01L21/30
摘要：
Fabrication methods for capacitive micromachined ultrasonic transducers (CMUTS) with independent and precise gap and post thickness control are provided. The fabrication methods are based on local oxidation or local oxidation of silicon (LOCOS) to grow oxide posts. The process steps enable low surface roughness to be maintained to allow for direct wafer bonding of the membrane. In addition, methods for fabricating a step in a substrate are provided with reduced or minimal over-etch time by utilizing the nonlinearity of oxide growth. The fabrication methods of the present invention produce CMUTs with unmatched uniformity, low parasitic capacitance, and high breakdown voltage.
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