公开(公告)号：US20100166878A1

公开(公告)日：2010-07-01

申请号：US12613330

申请日：2009-11-05

申请人： KWAN-KYU PARK ,  JI-HYUN PARK ,  KYUNG-HYUN KIM ,  SOO-JUNG KIM ,  WOO-RAM LEE ,  KWANG GILL LEE ,  SANG MI HAN ,  YOUNG-CHAE CHANG ,  JUNG-YOON CHOE ,  KEE-SIK KIM

发明人： KWAN-KYU PARK ,  JI-HYUN PARK ,  KYUNG-HYUN KIM ,  SOO-JUNG KIM ,  WOO-RAM LEE ,  KWANG GILL LEE ,  SANG MI HAN ,  YOUNG-CHAE CHANG ,  JUNG-YOON CHOE ,  KEE-SIK KIM

IPC分类号： A61K35/64 ,  A61P9/10

CPC分类号： A61K35/63

摘要： The present invention provides bee venom which can decrease expression levels of sclerotic factors, inflammatory factors and vascular adhesion factors associated with atherosclerosis, and a pharmaceutical composition comprising the bee venom as an active ingredient for the treatment of the atherosclerosis. When the bee venom was administered to laboratory animal models of atherosclerosis, the total cholesterol and neutral lipid were decreased, high-density cholesterol was maintained or even increased, the expression levels of TNF-α and IL-β as inflammation-associated cytokines were decreased in the blood, the expression levels of fibrosis-associated cytokines and vascular adhesion factors were decreased in the main artery and the heart, the plaque deposition generally caused by the atherosclerosis was decreased, and the expression levels of intercellular adhesion molecules (ICAM) and vascular cell adhesion molecules (VCAM), TGF-β1 and fibronectin as fibrosis-related cytokines were decreased.

摘要翻译： 本发明提供了可以降低与动脉粥样硬化有关的硬化因子，炎性因子和血管粘附因子的表达水平的蜂毒，以及包含蜂毒作为动脉粥样硬化治疗动物成分的药物组合物。 当蜂毒对动物动脉粥样硬化实验动物模型给药时，总胆固醇和中性脂质降低，高密度胆固醇维持甚至升高，TNF-α和IL- 随着炎症相关细胞因子在血液中的降低，纤维化相关细胞因子和血管粘附因子的表达水平在主动脉和心脏中减少，通常由动脉粥样硬化引起的斑块沉积减少，细胞间的表达水平 粘附分子（ICAM）和血管细胞粘附分子（VCAM），TGF-β1和纤连蛋白作为纤维化相关细胞因子降低。

公开(公告)号：US07745248B2

公开(公告)日：2010-06-29

申请号：US12288009

申请日：2008-10-14

申请人： Kwan Kyu Park ,  Mario Kupnik ,  Butrus T. Khuri-Yakub

发明人： Kwan Kyu Park ,  Mario Kupnik ,  Butrus T. Khuri-Yakub

IPC分类号： H01L21/00

CPC分类号： B06B1/0292

摘要： The current invention provides methods of fabricating a capacitive micromachined ultrasonic transducer (CMUT) that includes oxidizing a substrate to form an oxide layer on a surface of the substrate having an oxidation-enabling material, depositing and patterning an oxidation-blocking layer to form a post region and a cavity region on the substrate surface and remove the oxidation-blocking layer and oxide layer at the post region. The invention further includes thermally oxidizing the substrate to grow one or more oxide posts from the post region, where the post defines the vertical critical dimension of the device, and bonding a membrane layer onto the post to form a membrane of the device. A maximum allowed second oxidation thickness t2 can be determined, that is partially based on a desired step height and a device size, and a first oxidation thickness t1 can be determined that is partially based on the determined thickness t2.

摘要翻译： 本发明提供制造电容微加工超声换能器（CMUT）的方法，其包括氧化基底以在具有可氧化的材料的基底的表面上形成氧化物层，沉积和图案化氧化阻挡层以形成柱 区域和衬底表面上的空腔区域，并且在后部区域移除氧化阻挡层和氧化物层。 本发明还包括热氧化衬底以从柱区域生长一个或多个氧化物柱，其中柱定义了器件的垂直临界尺寸，以及将膜层结合到柱上以形成器件的膜。 可以确定最大允许的第二氧化厚度t2，其部分地基于期望的台阶高度和装置尺寸，并且可以基于确定的厚度t2来确定第一氧化厚度t1。

公开(公告)号：US20090142872A1

公开(公告)日：2009-06-04

申请号：US12288009

申请日：2008-10-14

申请人： Kwan Kyu Park ,  Mario Kupnik ,  Butrus T. Khuri-Yakub

发明人： Kwan Kyu Park ,  Mario Kupnik ,  Butrus T. Khuri-Yakub

IPC分类号： H01L21/30

CPC分类号： B06B1/0292

摘要： Fabrication methods for capacitive micromachined ultrasonic transducers (CMUTS) with independent and precise gap and post thickness control are provided. The fabrication methods are based on local oxidation or local oxidation of silicon (LOCOS) to grow oxide posts. The process steps enable low surface roughness to be maintained to allow for direct wafer bonding of the membrane. In addition, methods for fabricating a step in a substrate are provided with reduced or minimal over-etch time by utilizing the nonlinearity of oxide growth. The fabrication methods of the present invention produce CMUTs with unmatched uniformity, low parasitic capacitance, and high breakdown voltage.

摘要翻译： 提供了具有独立且精确的间隙和后厚度控制的电容微加工超声波换能器（CMUTS）的制造方法。 制造方法基于硅（LOCOS）的局部氧化或局部氧化以生长氧化物柱。 该工艺步骤使得能够保持低表面粗糙度以允许膜的直接晶片结合。 此外，通过利用氧化物生长的非线性，在衬底中制造步骤的方法具有减小的或最小的过蚀刻时间。 本发明的制造方法产生具有无与伦比的均匀性，低寄生电容和高击穿电压的CMUT。