发明申请
US20090146170A1 HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE BY SURFACE ROUGHENING
有权
通过表面粗化的高光提取效率的基于氮化物的发光二极管
- 专利标题： HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE BY SURFACE ROUGHENING
- 专利标题（中）： 通过表面粗化的高光提取效率的基于氮化物的发光二极管
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申请号： US12325946申请日： 2008-12-01
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公开(公告)号： US20090146170A1公开(公告)日： 2009-06-11
- 发明人: Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人： Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/18
摘要：
A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
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