发明申请
- 专利标题： SEMICONDUCTOR GROUND SHIELD
- 专利标题（中）： 半导体接地屏蔽
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申请号： US12371662申请日： 2009-02-16
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公开(公告)号： US20090146247A1公开(公告)日： 2009-06-11
- 发明人: Mete Erturk , Alvin J. Joseph , Anthony K. Stamper
- 申请人： Mete Erturk , Alvin J. Joseph , Anthony K. Stamper
- 主分类号： H01L29/70
- IPC分类号： H01L29/70
摘要：
A ground shield is disclosed that includes a ‘cheesed’ metal positioned within a dielectric layer and a metal region positioned within a first metal level over the cheesed metal. The ground shield can have different forms depending on the metal used, and provisions are made to prevent diffusion of copper (Cu) when that is used as the metal in the cheese metal of the ground shield. The ground shield provides a low resistance, very thick metal at a first metal (M1) level for passive RF elements in conjunction with the standard back-end-of-line (BEOL) integration. The invention also includes a method of forming the ground shield.
公开/授权文献
- US07659598B2 Semiconductor ground shield 公开/授权日：2010-02-09
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