A ridge stripe type semiconductor laser device is provided, on a semiconductor substrate (102), with a first conduction type cladding layer (103), an active layer (104), a second conduction type first cladding layer (105), a second conduction type second cladding layer (108) of a ridge type stripe shape for confining direction, and a current block layer (107) formed by removing at least an upper portion of the ridge. In a section normal to the stripe direction of the ridge, each of the two side faces of the ridge is provided with a first face (118) substantially normal to the semiconductor substrate surface and extending downward from the upper end of the ridge, and a second face (119) formed to have a substantially straight skirt slope face inclined at the ridge skirt portion obliquely downward to the ridge outside. The first face and the second face are made to merge either directly or through a third intermediate face into each other. A face (111) of a semiconductor constituting the second cladding layer is exposed to the second face. The semiconductor laser device thus provided can have a high kink level and a high output with a low operating current.