发明申请
- 专利标题: GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE
- 专利标题(中): 基于氮化镓的化合物半导体发光器件
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申请号: US12065970申请日: 2006-09-05
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公开(公告)号: US20090152585A1公开(公告)日: 2009-06-18
- 发明人: Hironao Shinohara , Hisayuki Miki , Noritaka Muraki
- 申请人: Hironao Shinohara , Hisayuki Miki , Noritaka Muraki
- 申请人地址: JP Minato-ku, Tokyo
- 专利权人: SHOWA DENKO K.K.
- 当前专利权人: SHOWA DENKO K.K.
- 当前专利权人地址: JP Minato-ku, Tokyo
- 优先权: JP2005-258184 20050906
- 国际申请: PCT/JP2006/317930 WO 20060905
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.