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    Gallium nitride-based compound semiconductor light-emitting device
    1.
    发明授权
    Gallium nitride-based compound semiconductor light-emitting device 有权
    氮化镓系化合物半导体发光元件

    公开(公告)号：US07847314B2

    公开(公告)日：2010-12-07

    申请号：US12065970

    申请日：2006-09-05

    申请人： Hironao Shinohara ,  Hisayuki Miki ,  Noritaka Muraki

    发明人： Hironao Shinohara ,  Hisayuki Miki ,  Noritaka Muraki

    IPC分类号： H01L21/20 ,  H01L21/00

    CPC分类号： H01L33/025 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/42

    摘要： It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.

    摘要翻译： 本发明的目的是提供一种氮化镓系化合物半导体发光元件，该氮化镓系化合物半导体发光元件的光输出效率优异，仅需要低驱动电压（Vf）。 本发明的氮化镓系化合物半导体发光元件包括n型半导体层，发光层和由氮化镓系化合物半导体形成的p型半导体层，并依次层叠在基板上， 以及分别与p型半导体层和n型半导体层接触的正极和负极，其中在p中存在p型杂质和氢原子共存的区域 与正极接触的至少一部分与正极的p型半导体层接触的至少一部分由n型导电透光材料形成。

    GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE
    2.
    发明申请
    GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    基于氮化镓的化合物半导体发光器件

    公开(公告)号：US20090152585A1

    公开(公告)日：2009-06-18

    申请号：US12065970

    申请日：2006-09-05

    申请人： Hironao Shinohara ,  Hisayuki Miki ,  Noritaka Muraki

    发明人： Hironao Shinohara ,  Hisayuki Miki ,  Noritaka Muraki

    IPC分类号： H01L33/00

    CPC分类号： H01L33/025 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/42

    摘要： It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.

    摘要翻译： 本发明的目的是提供一种氮化镓系化合物半导体发光元件，该氮化镓系化合物半导体发光元件的光输出效率优异，仅需要低驱动电压（Vf）。 本发明的氮化镓系化合物半导体发光元件包括n型半导体层，发光层和由氮化镓系化合物半导体形成的p型半导体层，并依次层叠在基板上， 以及分别与p型半导体层和n型半导体层接触的正极和负极，其中在p中存在p型杂质和氢原子共存的区域 与正极接触的至少一部分与正极的p型半导体层接触的至少一部分由n型导电透光材料形成。

    Gallium Nitride-Based Compound Semiconductor Light-Emitting Device
    5.
    发明申请
    Gallium Nitride-Based Compound Semiconductor Light-Emitting Device 审中-公开
    基于氮化镓的复合半导体发光器件

    公开(公告)号：US20080048172A1

    公开(公告)日：2008-02-28

    申请号：US10586909

    申请日：2005-01-28

    申请人： Noritaka Muraki ,  Munetaka Watanabe ,  Hisayuki Miki ,  Yasushi Ohno

    发明人： Noritaka Muraki ,  Munetaka Watanabe ,  Hisayuki Miki ,  Yasushi Ohno

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/42

    摘要： A gallium nitride compound semiconductor light-emitting device includes a crystalline substrate (10), a light-emiting layer (15) of a quantum well structure which is formed of a gallium nitride compound semiconductor barrier layer and a gallium nitride compound semiconductor well layer, which light-emitting layer is provided on a second side of the crystalline substrate, a contact layer (17) formed of a Group III-V compound semiconductor for providing an Ohmic electrode for supplying device operation current to the light-emitting layer, and an Ohmic electrode (18) which is provided on the contact layer and has an aperture through which a portion of the contact layer is exposed. The Ohmic electrode exhibits light permeability with respect to light emitted from the light-emitting layer. The well layer contains a thick portion having a large thickness and a thin portion having a small thickness.

    摘要翻译： 氮化镓系化合物半导体发光元件包括由氮化镓系化合物半导体势垒层和氮化镓系化合物半导体阱层构成的量子阱结构的结晶性基板（10），发光层（15） 所述发光层设置在所述结晶基板的第二面上，由用于提供用于向所述发光层提供器件工作电流的欧姆电极的III-V族化合物半导体形成的接触层（17） 欧姆电极（18），其设置在接触层上并且具有孔，接触层的一部分穿过该孔露出。 欧姆电极相对于从发光层发射的光呈现透光性。 阱层包含厚度较大的厚壁部分和厚度较小的薄壁部分。

    Transparent Electrode for Semiconductor Light-Emitting Device
    6.
    发明申请
    Transparent Electrode for Semiconductor Light-Emitting Device 有权
    用于半导体发光器件的透明电极

    公开(公告)号：US20080042159A1

    公开(公告)日：2008-02-21

    申请号：US11659360

    申请日：2005-07-27

    申请人： Nobuo Eitoh ,  Noritaka Muraki ,  Hisayuki Miki ,  Munetaka Watanabe

    发明人： Nobuo Eitoh ,  Noritaka Muraki ,  Hisayuki Miki ,  Munetaka Watanabe

    IPC分类号： H01L33/00 ,  H01L21/28

    CPC分类号： H01L33/42 ,  H01L33/32

    摘要： A transparent electrode for a gallium nitride-based compound semiconductor light-emitting device includes a p-type semiconductor layer (5), a contact metal layer (1) formed by ohmic contact on the p-type semiconductor layer, an current diffusion layer (12) formed on the contact metal layer and having a lower magnitude of resistivity on the plane of the transparent electrode than the contact metal, and a bonding pad (13) formed on the current diffusion layer. The transparent electrode is at an advantage in widening the surface of light emission in the p-type semiconductor layer, decreasing the operation voltage in the forward direction, and enabling the bonding pad to provide excellent adhesive strength.

    摘要翻译： 用于氮化镓基化合物半导体发光器件的透明电极包括p型半导体层（5），在p型半导体层上由欧姆接触形成的接触金属层（1），电流扩散层 12），形成在所述接触金属层上，并且在所述透明电极的平面上的电阻率比接触金属低，并且形成在所述电流扩散层上的接合焊盘（13）。 透明电极在扩大p型半导体层的发光表面方面具有优点，降低了正向的工作电压，能够提供优异的粘合强度。

    Transparent electrode
    7.
    发明申请
    Transparent electrode 有权
    透明电极

    公开(公告)号：US20060175682A1

    公开(公告)日：2006-08-10

    申请号：US11348486

    申请日：2006-02-07

    申请人： Noritaka Muraki ,  Munetaka Watanabe ,  Yasushi Ohono ,  Hisayuki Miki

    发明人： Noritaka Muraki ,  Munetaka Watanabe ,  Yasushi Ohono ,  Hisayuki Miki

    IPC分类号： H01L31/00

    CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/40

    摘要： A transparent electrode for use in a gallium nitride-based compound semiconductor light-emitting device having an emission wavelength of 440 nm or less, includes a metal layer disposed in contiguity to a p-type semiconductor layer and a current diffusion layer disposed on the metal layer. The transparent electrode contains substantially no Au in the whole region thereof. The metal layer contains any one element selected from the group consisting of Pt, Ir, Ru and Rh as a main component. The current diffusion layer contains any one element selected from the group consisting of Pt, Ir, Ru and Rh as a main component except for the case where the metal layer and the current diffusion layer have the same composition. It is possible to provide a white light-emitting device provided with the transparent electrode, a white light-emitting lamp using the white light-emitting device and a lighting fixture using the white light-emitting lamp.

    摘要翻译： 用于发射波长为440nm以下的氮化镓系化合物半导体发光元件的透明电极包括与p型半导体层相邻设置的金属层和设置在金属上的电流扩散层 层。 透明电极在其整个区域基本上不含Au。 金属层含有选自由Pt，Ir，Ru和Rh组成的组中的任何一种元素作为主要成分。 除了金属层和电流扩散层具有相同组成的情况之外，电流扩散层包含选自由Pt，Ir，Ru和Rh组成的组中的任何一种元素作为主要成分。 可以提供一种设置有透明电极的白色发光装置，使用白色发光装置的白色发光灯和使用白色发光灯的照明器具。

    Electrode for light-emitting semiconductor devices and method of producing the electrode
    8.
    发明授权
    Electrode for light-emitting semiconductor devices and method of producing the electrode 失效
    用于发光半导体器件的电极及其制造方法

    公开(公告)号：US06268618B1

    公开(公告)日：2001-07-31

    申请号：US09073765

    申请日：1998-05-07

    申请人： Hisayuki Miki ,  Takashi Udagawa ,  Noritaka Muraki ,  Mineo Okuyama

    发明人： Hisayuki Miki ,  Takashi Udagawa ,  Noritaka Muraki ,  Mineo Okuyama

    IPC分类号： H01L3300

    CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2933/0016 ,  H01L2924/00

    摘要： An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed to come into partial contact with the surface of the semiconductor with at least a region in contact with the semiconductor having a higher contact resistance per unit area with respect to the semiconductor than a region of the light-permeable electrode in contact with the semiconductor. This device electrode is formed by forming a wire-bonding electrode on a portion of the surface of a p-type GaN-base compound semiconductor, forming on the surface of the semiconductor a first layer that is of at least one member selected from the group consisting of Au, Pt and Pd and is formed to overlay the upper surface of the wire-bonding electrode at a portion at which the wire-bonding electrode is located, forming on the first layer a second layer that is of at least one metal selected from the group consisting of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg and In, and forming a light-permeable electrode by heat-treating the first and second layers in an atmosphere that contains oxygen.

    摘要翻译： 用于发光半导体器件的电极包括形成为与半导体的表面接触的透光电极和与透光电极电接触并形成的导线接合电极 与半导体的表面部分接触，至少与半导体接触的区域相对于半导体具有比单位面积的接触电阻高于与半导体接触的透光性电极的区域。 该器件电极通过在p型GaN基化合物半导体的表面的一部分上形成引线键合电极而形成，在半导体的表面上形成第一层，该第一层为选自以下的至少一种： 由Au，Pt和Pd组成，并且形成为在引线接合电极所在的部分覆盖引线接合电极的上表面，在第一层上形成至少一种选择的金属的第二层 从由Ni，Ti，Sn，Cr，Co，Zn，Cu，Mg和In组成的组中，通过在包含氧的气​​氛中对第一层和第二层进行热处理而形成透光性电极。

    Electrode for light-emitting semiconductor devices
    10.
    发明授权
    Electrode for light-emitting semiconductor devices 失效
    用于发光半导体器件的电极

    公开(公告)号：US06403987B1

    公开(公告)日：2002-06-11

    申请号：US09694325

    申请日：2000-10-24

    申请人： Hisayuki Miki ,  Takashi Udagawa ,  Noritaka Muraki ,  Mineo Okuyama

    发明人： Hisayuki Miki ,  Takashi Udagawa ,  Noritaka Muraki ,  Mineo Okuyama

    IPC分类号： H01L3300

    CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2933/0016 ,  H01L2924/00

    摘要： An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed to come into partial contact with the surface of the semiconductor with at least a region in contact with the semiconductor having a higher contact resistance per unit area with respect to the semiconductor than a region of the light-permeable electrode in contact with the semiconductor. This device electrode is formed by forming a wire-bonding electrode on a portion of the surface of a p-type GaN-base compound semiconductor, forming on the surface of the semiconductor a first layer that is of at least one member selected from the group consisting of Au, Pt and Pd and is formed to overlay the upper surface of the wire-bonding electrode at a portion at which the wire-bonding electrode is located, forming on the first layer a second layer that is of at least one metal selected from the group consisting of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg and In, and forming a light-permeable electrode by heat-treating the first and second layers in an atmosphere that contains oxygen.

    摘要翻译： 用于发光半导体器件的电极包括形成为与半导体的表面接触的透光电极和与透光电极电接触并形成的导线接合电极 与半导体的表面部分接触，至少与半导体接触的区域相对于半导体具有比单位面积的接触电阻高于与半导体接触的透光性电极的区域。 该器件电极通过在p型GaN基化合物半导体的表面的一部分上形成引线键合电极而形成，在半导体的表面上形成第一层，该第一层为选自以下的至少一种： 由Au，Pt和Pd组成，并且形成为在引线接合电极所在的部分处覆盖引线接合电极的上表面，在第一层上形成至少一种选择的金属的第二层 从由Ni，Ti，Sn，Cr，Co，Zn，Cu，Mg和In组成的组中，通过在包含氧的气​​氛中对第一层和第二层进行热处理而形成透光性电极。