发明申请
- 专利标题: METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE
- 专利标题(中): 制造半导体器件和半导体器件的方法
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申请号: US12323770申请日: 2008-11-26
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公开(公告)号: US20090152652A1公开(公告)日: 2009-06-18
- 发明人: Yoshifumi NISHI , Yoshinori Tsuchiya , Takashi Yamauchi , Junji Koga
- 申请人: Yoshifumi NISHI , Yoshinori Tsuchiya , Takashi Yamauchi , Junji Koga
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-309267 20071129
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
Described herein is a method of manufacturing a semiconductor device realizing higher performance by reducing contact resistance of an electrode. In the method, a gate insulating film, a gate electrode are formed on a semiconductor substrate. A first metal is deposited substrate, and a metal semiconductor compound layer is formed on the surface of the semiconductor substrate by making the first metal and the semiconductor substrate react each other by a first heat treatment. Ions having a mass equal to or larger than atomic weight of Si are implanted into the metal semiconductor compound layer. A second metal is deposited on the metal semiconductor compound layer. An interface layer is formed by making the second metal segregated at an interface between the metal semiconductor compound layer and the semiconductor substrate by diffusing the second metal through the metal semiconductor compound layer by a second heat treatment.
公开/授权文献
- US07977182B2 Method of manufacturing MISFET with low contact resistance 公开/授权日:2011-07-12