A magnetic random access memory of a spin transfer process, includes a plurality of magnetic memory cells 10, a current supply unit 43+20+30 and a control unit 41. The current supply unit 43+20+30 supplies a write current to the magnetic memory cell 10. The control unit controls a supply of the write current supplied by the current supply unit 43+20+30 on the basis of a write data. Each magnetic memory cell 10 includes a magnetic material storage layer which stores a data by using a magnetization state, and at least one spin control layer which supplies spin electrons to the magnetic material storage layer on the basis of a same control principle independently of the write data, on the basis of the write current.