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    MAGNETIC RANDOM ACCESS MEMORY AND OPERATION METHOD THEREOF
    2.
    发明申请
    MAGNETIC RANDOM ACCESS MEMORY AND OPERATION METHOD THEREOF 有权
    磁性随机存取存储器及其操作方法

    公开(公告)号：US20090109736A1

    公开(公告)日：2009-04-30

    申请号：US11996073

    申请日：2006-07-13

    申请人： Yuukou Katou

    发明人： Yuukou Katou

    IPC分类号： G11C11/00 ,  G11C7/00 ,  G11C11/14

    CPC分类号： G11C29/028 ,  G11C11/1675 ,  G11C11/1677 ,  G11C11/1693 ,  G11C29/02 ,  G11C29/021 ,  G11C2029/5006

    摘要： The MRAM includes: a memory cell 10 including a magnetoresistance element 1, a current supply circuit and a controller. The current supply circuit supplies, to the magnetoresistance element 1, a write current IW in a direction corresponding to data to be written into the memory cell 10. The controller controls supply of the write current IW from the current supply circuit. The controller also determines whether or not a data is written into the memory cell 10 during a predetermined write period PW in which the write current IW is supplied. The controller instructs the current supply circuit to finish supplying the write current IW when determining that the data is written into the memory cell (10).

    摘要翻译： MRAM包括：包括磁阻元件1，电流供应电路和控制器的存储单元10。 电流供给电路向磁阻元件1向与写入存储单元10的数据相对应的方向提供写入电流IW。控制器控制来自电流供给电路的写入电流IW的供给。 在提供写入电流IW的预定写入周期PW期间，控制器还确定数据是否被写入存储器单元10。 当确定数据被写入存储单元（10）时，控制器指示当前供电电路完成写入电流IW。

    SEMICONDUCTOR STORAGE DEVICE AND OPERATING METHOD OF THE SAME
    3.
    发明申请
    SEMICONDUCTOR STORAGE DEVICE AND OPERATING METHOD OF THE SAME 有权
    半导体存储器件及其工作方法

    公开(公告)号：US20090073742A1

    公开(公告)日：2009-03-19

    申请号：US12282163

    申请日：2007-03-05

    申请人： Yuukou Katou

    发明人： Yuukou Katou

    IPC分类号： G11C11/00 ,  G11C8/00

    CPC分类号： H01L27/226 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1673

    摘要： A semiconductor storage device includes: reading blocks; third wirings; reading switches; a control circuit; and evaluating circuits. The reading blocks includes first and second wirings extended in a first and second direction, respectively, and resistive storage elements arranged at points where the first and second wirings intersect. The third wirings is extended in the second direction and provided correspondingly to the second wirings. The reading switches are arranged between the third and second wirings. The control circuit controls the reading switches and supplies currents or the like to the first wirings. The evaluating circuits are connected to the third wirings and evaluate the currents or the like. When data is read out, the control circuit selects a selection reading block and a selection first wiring and supplies the currents or the like, and the evaluating circuits execute the evaluations of the currents or the like in the third wirings.

    摘要翻译： 半导体存储装置包括：读块; 第三条布线 阅读开关 一个控制电路; 和评估电路。 读取块分别包括在第一和第二方向上延伸的第一和第二布线，以及布置在第一和第二布线相交的点处的电阻存储元件。 第三布线在第二方向延伸并相应地提供给第二布线。 读取开关布置在第三和第二布线之间。 控制电路控制读取开关并将电流等提供给第一布线。 评估电路连接到第三布线并评估电流等。 当读出数据时，控制电路选择选择读取块和选择第一布线并提供电流等，并且评估电路执行第三布线中的电流等的评估。

    Magnetic random access memory and operating method of the same
    4.
    发明授权
    Magnetic random access memory and operating method of the same 有权
    磁性随机存取存储器和操作方法相同

    公开(公告)号：US08089803B2

    公开(公告)日：2012-01-03

    申请号：US12083001

    申请日：2006-10-02

    申请人： Yuukou Katou

    发明人： Yuukou Katou

    IPC分类号： G11C11/15

    CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1675 ,  G11C29/02 ,  G11C29/028 ,  G11C2029/5006

    摘要： A magnetic random access memory of a spin transfer process, includes a plurality of magnetic memory cells 10, a current supply unit 43+20+30 and a control unit 41. The current supply unit 43+20+30 supplies a write current to the magnetic memory cell 10. The control unit controls a supply of the write current supplied by the current supply unit 43+20+30 on the basis of a write data. Each magnetic memory cell 10 includes a magnetic material storage layer which stores a data by using a magnetization state, and at least one spin control layer which supplies spin electrons to the magnetic material storage layer on the basis of a same control principle independently of the write data, on the basis of the write current.

    摘要翻译： 自旋转移处理的磁性随机存取存储器包括多个磁存储单元10，电流供应单元43 + 20 + 30和控制单元41.电流供应单元43 + 20 + 30将写入电流提供给 磁存储单元10.控制单元基于写入数据控制由电流供应单元43 + 20 + 30提供的写入电流的供应。 每个磁存储单元10包括通过使用磁化状态存储数据的磁性材料存储层，以及至少一个自旋控制层，其基于相同的控制原理而独立于写入而向磁性材料存储层提供自旋电子 数据，在写入电流的基础上。

    MAGNETIC STORAGE DEVICE
    5.
    发明申请
    MAGNETIC STORAGE DEVICE 有权
    磁性存储器件

    公开(公告)号：US20100173173A1

    公开(公告)日：2010-07-08

    申请号：US12602234

    申请日：2008-05-15

    申请人： Yuukou Katou

    发明人： Yuukou Katou

    IPC分类号： G11B5/33

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228

    摘要： A magnetic storage device includes a laminated structure and a third magnetic body. The laminated structure includes a first magnetic body, a nonmagnetic body, and a second magnetic body which are laminated. The third magnetic body is provided at any of a first magnetic body side and a second magnetic body side. Resistance of the laminated structure is changed based on a difference between magnetization directions of the first magnetic body and the second magnetic body. A projection of the third magnetic body onto the first magnetic body at least partly overlaps the first magnetic body. The first magnetic body and the third magnetic body are magnetically coupled. A planar shape of the first magnetic body is a shape that is long in a first direction. A length of the third magnetic body is shorter than a length of the first magnetic body in the first direction. An aspect ratio of a length of a long-axis direction of the planar shape-of the first magnetic body divided by a length of a short-axis direction is greater than an aspect ratio of a length of a long-axis direction of a planar shape of the third magnetic body divided by a length of a short-axis direction.

    摘要翻译： 磁存储装置包括层压结构和第三磁体。 叠层结构包括层叠的第一磁性体，非磁性体和第二磁性体。 第三磁性体设置在第一磁性体侧和第二磁性体侧。 基于第一磁性体与第二磁性体的磁化方向的差异，层叠结构的电阻变化。 第三磁体在第一磁体上的突起至少部分地与第一磁体重叠。 第一磁体和第三磁体磁耦合。 第一磁性体的平面形状是在第一方向上长的形状。 第三磁体的长度比第一磁体在第一方向上的长度短。 第一磁体的平面形状的长轴方向的长度除以短轴方向的长度的长宽比大于平面状的长轴方向的长度的纵横比 第三磁体的形状除以短轴方向的长度。

    Magnetic unit and magnetic storage device
    6.
    发明授权
    Magnetic unit and magnetic storage device 有权
    磁单元和磁存储装置

    公开(公告)号：US08675399B2

    公开(公告)日：2014-03-18

    申请号：US12528393

    申请日：2007-12-04

    申请人： Yuukou Katou

    发明人： Yuukou Katou

    IPC分类号： G11C11/02

    CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

    摘要： A magnetic unit includes: a magnetic pinned layer, a first function body, and a second function body. The magnetic pinned layer is provided that a magnetization direction is pinned. The first function body is provided in contact with the magnetic pinned layer and performs a function with the magnetic pinned layer. The second function body is provided in contact with the magnetic pinned layer. The second function body is any of a nonmagnetic conductor, a nonmagnetic insulator, and a function body. The magnetic pinned layer includes: a plurality of magnetic substance layers, and a nonmagnetic conductive layer provided between the plurality of magnetic substance layers. The nonmagnetic conductive layer ferromagnetically or antiferromagnetically couples magnetic substance layers on both sides. A total amount of magnetizations of the plurality of magnetic substance layers is approximately zero. Among the plurality of magnetic substance layers, a magnitude of an anisotropic magnetic field of a group of magnetic substance layers directed toward a first direction is different from that of a group of magnetic substance layers directed toward a second direction.

    摘要翻译： 磁性单元包括：磁性固定层，第一功能体和第二功能体。 磁性钉扎层被提供为磁化方向固定。 第一功能体设置成与磁性被钉扎层接触并且执行具有磁性固定层的功能。 第二功能体设置成与磁性固定层接触。 第二功能体是非磁性导体，非磁性绝缘体和功能体中的任何一个。 磁性被钉扎层包括：多个磁性物质层和设置在多个磁性物质层之间的非磁性导电层。 非磁性导电层铁磁或反铁磁耦合两侧的磁性物质层。 多个磁性物质层的磁化的总量近似为零。 在多个磁性物质层中，朝向第一方向的一组磁性物质层的各向异性磁场的大小与朝向第二方向的一组磁性物质层的大小不同。

    Magnetic random access memory and operation method thereof
    7.
    发明授权
    Magnetic random access memory and operation method thereof 有权
    磁性随机存取存储器及其操作方法

    公开(公告)号：US07755931B2

    公开(公告)日：2010-07-13

    申请号：US11996073

    申请日：2006-07-13

    申请人： Yuukou Katou

    发明人： Yuukou Katou

    IPC分类号： G11C11/00

    CPC分类号： G11C29/028 ,  G11C11/1675 ,  G11C11/1677 ,  G11C11/1693 ,  G11C29/02 ,  G11C29/021 ,  G11C2029/5006

    摘要： The MRAM includes: a memory cell 10 including a magnetoresistance element 1, a current supply circuit and a controller. The current supply circuit supplies, to the magnetoresistance element 1, a write current IW in a direction corresponding to data to be written into the memory cell 10. The controller controls supply of the write current IW from the current supply circuit. The controller also determines whether or not a data is written into the memory cell 10 during a predetermined write period PW in which the write current IW is supplied. The controller instructs the current supply circuit to finish supplying the write current IW when determining that the data is written into the memory cell (10).

    摘要翻译： MRAM包括：包括磁阻元件1，电流供应电路和控制器的存储单元10。 电流供给电路向磁阻元件1向与写入存储单元10的数据相对应的方向提供写入电流IW。控制器控制来自电流供给电路的写入电流IW的供给。 在提供写入电流IW的预定写入周期PW期间，控制器还确定数据是否被写入存储器单元10。 当确定数据被写入存储单元（10）时，控制器指示当前供电电路完成写入电流IW。

    Magnetic Random Access Memory and Operating Method of the Same
    8.
    发明申请
    Magnetic Random Access Memory and Operating Method of the Same 有权
    磁性随机存取存储器及其操作方法

    公开(公告)号：US20090154231A1

    公开(公告)日：2009-06-18

    申请号：US12083001

    申请日：2006-10-02

    申请人： Yuukou Katou

    发明人： Yuukou Katou

    IPC分类号： G11C11/15 ,  G11C11/14 ,  G11C11/416

    CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1675 ,  G11C29/02 ,  G11C29/028 ,  G11C2029/5006

    摘要： A magnetic random access memory of a spin transfer process, includes a plurality of magnetic memory cells 10, a current supply unit 43+20+30 and a control unit 41. The current supply unit 43+20+30 supplies a write current to the magnetic memory cell 10. The control unit controls a supply of the write current supplied by the current supply unit 43+20+30 on the basis of a write data. Each magnetic memory cell 10 includes a magnetic material storage layer which stores a data by using a magnetization state, and at least one spin control layer which supplies spin electrons to the magnetic material storage layer on the basis of a same control principle independently of the write data, on the basis of the write current.

    摘要翻译： 自旋转移处理的磁性随机存取存储器包括多个磁存储单元10，电流供应单元43 + 20 + 30和控制单元41.电流供应单元43 + 20 + 30将写入电流提供给 磁存储单元10.控制单元基于写入数据控制由电流供应单元43 + 20 + 30提供的写入电流的供应。 每个磁存储单元10包括通过使用磁化状态存储数据的磁性材料存储层，以及至少一个自旋控制层，其基于相同的控制原理而独立于写入而向磁性材料存储层提供自旋电子 数据，在写入电流的基础上。

    MAGNETIC UNIT AND MAGNETIC STORAGE DEVICE
    10.
    发明申请
    MAGNETIC UNIT AND MAGNETIC STORAGE DEVICE 有权
    磁性单元和磁性存储设备

    公开(公告)号：US20100110591A1

    公开(公告)日：2010-05-06

    申请号：US12528393

    申请日：2007-12-04

    申请人： Yuukou Katou

    发明人： Yuukou Katou

    IPC分类号： G11B21/16

    CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

    摘要： A magnetic unit includes: a magnetic pinned layer, a first function body, and a second function body. The magnetic pinned layer is provided that a magnetization direction is pinned. The first function body is provided in contact with the magnetic pinned layer and performs a function with the magnetic pinned layer. The second function body is provided in contact with the magnetic pinned layer. The second function body is any of a nonmagnetic conductor, a nonmagnetic insulator, and a function body. The magnetic pinned layer includes: a plurality of magnetic substance layers, and a nonmagnetic conductive layer provided between the plurality of magnetic substance layers. The nonmagnetic conductive layer ferromagnetically or antiferromagnetically couples magnetic substance layers on both sides. A total amount of magnetizations of the plurality of magnetic substance layers is approximately zero. Among the plurality of magnetic substance layers, a magnitude of an anisotropic magnetic field of a group of magnetic substance layers directed toward a first direction is different from that of a group of magnetic substance layers directed toward a second direction.

    摘要翻译： 磁性单元包括：磁性固定层，第一功能体和第二功能体。 磁性钉扎层被提供为磁化方向固定。 第一功能体设置成与磁性被钉扎层接触并且执行具有磁性固定层的功能。 第二功能体设置成与磁性固定层接触。 第二功能体是非磁性导体，非磁性绝缘体和功能体中的任何一个。 磁性被钉扎层包括：多个磁性物质层和设置在多个磁性物质层之间的非磁性导电层。 非磁性导电层铁磁或反铁磁耦合两侧的磁性物质层。 多个磁性物质层的磁化的总量近似为零。 在多个磁性物质层中，朝向第一方向的一组磁性物质层的各向异性磁场的大小与朝向第二方向的一组磁性物质层的大小不同。