Invention Application
US20090154517A1 HYBRID LASER DIODE FOR SINGLE MODE OPERATION AND METHOD OF FABRICATING THE SAME
失效
用于单模操作的混合激光二极管及其制造方法
- Patent Title: HYBRID LASER DIODE FOR SINGLE MODE OPERATION AND METHOD OF FABRICATING THE SAME
- Patent Title (中): 用于单模操作的混合激光二极管及其制造方法
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Application No.: US12118551Application Date: 2008-05-09
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Publication No.: US20090154517A1Publication Date: 2009-06-18
- Inventor: Young-Ahn LEEM , Ki-Soo KIM , Jung-Ho SONG , O-Kyun KWON , Gyung-Ock KIM
- Applicant: Young-Ahn LEEM , Ki-Soo KIM , Jung-Ho SONG , O-Kyun KWON , Gyung-Ock KIM
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Priority: KR10-2007-128857 20071212
- Main IPC: H01S5/125
- IPC: H01S5/125
Abstract:
Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating.
Public/Granted literature
- US07974326B2 Hybrid laser diode for single mode operation and method of fabricating the same Public/Granted day:2011-07-05
Information query
