Resonator of hybrid laser diode
    2.
    发明授权
    Resonator of hybrid laser diode 失效
    混合激光二极管谐振器

    公开(公告)号:US07995625B2

    公开(公告)日:2011-08-09

    申请号:US12499069

    申请日:2009-07-07

    Abstract: Provided is a resonator of a hybrid laser diode. The resonator includes: a substrate including a semiconductor layer where a hybrid waveguide, a multi-mode waveguide, and a single mode waveguide are connected in series; a compound semiconductor waveguide, provided on the hybrid waveguide of the semiconductor layer, having a tapered coupling structure at one end of the compound semiconductor waveguide, the tapered coupling structure overlapping the multi-mode waveguide partially; and a reflection part provided on one end of the single mode waveguide. The multi-mode waveguide has a narrower width than the hybrid waveguide and the single mode waveguide has a narrower width than the multi-mode waveguide.

    Abstract translation: 提供了一种混合激光二极管的谐振器。 谐振器包括:包括混合波导,多模波导和单模波导串联连接的半导体层的基板; 复合半导体波导,设置在半导体层的混合波导上,在化合物半导体波导的一端具有锥形耦合结构,锥形耦合结构部分地与多模波导重叠; 以及设置在单模波导的一端的反射部。 多模波导具有比混合波导窄的宽度,并且单模波导具有比多模波导窄的宽度。

    High-power, broad-band, superluminescent diode and method of fabricating the same
    4.
    发明授权
    High-power, broad-band, superluminescent diode and method of fabricating the same 有权
    大功率,宽带,超发光二极管及其制造方法

    公开(公告)号:US07745836B2

    公开(公告)日:2010-06-29

    申请号:US12118543

    申请日:2008-05-09

    CPC classification number: H01L33/0045 H01L33/02

    Abstract: Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.

    Abstract translation: 提供了具有高光功率和宽波长带的超发光二极管及其制造方法。 超发光二极管包括:至少一个高光限制因子(HOCF)区域; 以及具有比HOCF区域更低的光限制因子的至少一个低光限制因子(LOCF)区域。 该方法包括通过选择性区域生长方法获得HOCF区域和LOCF区域中的光限制因子的差异,所述选择性区域生长方法使用根据暴露衬底的开口的宽度差的薄层的沉积厚度差。

    Laser diode generating passive mode and method of creating optical pulse using the same diode
    6.
    发明申请
    Laser diode generating passive mode and method of creating optical pulse using the same diode 有权
    激光二极管产生无源模式和使用相同二极管产生光脉冲的方法

    公开(公告)号:US20070091942A1

    公开(公告)日:2007-04-26

    申请号:US11438201

    申请日:2006-05-22

    Abstract: Provided are a laser diode generating passive mode locking that does not contain non-linear sector of an SA, and a method of creating an optical pulse using the same diode. The laser diode includes a DFB sector serving as a reflector and a gain sector. The gain sector is connected to the DFB sector and includes an as-cleaved facet formed at the end of the gain sector. When a current less than a threshold current is applied to the DFB sector to allow the DFB sector to operate as a reflector, passive mode locking occurs swiftly and therefore a sector of the SA is not required, which makes manufacturing simple. Also, it is possible to effectively extend a frequency variable region compared to using of the SA.

    Abstract translation: 提供了一种激光二极管,其产生不包含SA的非线性扇区的无源模式锁定,以及使用相同二极管产生光脉冲的方法。 激光二极管包括用作反射器的DFB扇区和增益扇区。 增益扇区连接到DFB扇区,并包括在增益扇区末端形成的切割面。 当将小于阈值电流的电流施加到DFB扇区以允许DFB扇区作为反射器操作时,被动模式锁定迅速发生,因此不需要SA的扇区,这使制造变得简单。 此外,与使用SA相比,可以有效地扩展频率可变区域。

    Dual mode semiconductor laser and terahertz wave apparatus using the same
    8.
    发明授权
    Dual mode semiconductor laser and terahertz wave apparatus using the same 有权
    双模半导体激光器和使用其的太赫兹波装置

    公开(公告)号:US08774243B2

    公开(公告)日:2014-07-08

    申请号:US13022985

    申请日:2011-02-08

    Abstract: Provided are a dual mode semiconductor laser and a terahertz wave apparatus using the same. The dual mode semiconductor laser includes a distributed feedback laser structure section including a first diffraction grating on a substrate and a distributed Bragg reflector laser structure section including a second diffraction grating on the substrate. A first wavelength oscillated by the distributed feedback laser structure section and a second wavelength oscillated by the distributed Bragg reflector laser structure section are different from each other, and the distributed feedback laser structure section and the distributed Bragg reflector laser structure section share the same gain medium with each other.

    Abstract translation: 提供了一种双模式半导体激光器和使用该双模半导体激光器的太赫兹波装置。 双模式半导体激光器包括分布反馈激光器结构部分,其包括在衬底上的第一衍射光栅和在衬底上包括第二衍射光栅的分布式布拉格反射器激光器结构部分。 由分布式反馈激光器结构部分振荡的第一波长和由分布布拉格反射器激光器结构部分振荡的第二波长彼此不同,分布反馈激光器结构部分和分布式布拉格反射器激光器结构部分共享相同的增益介质 与彼此。

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