Abstract:
Provided is a laser device. In the laser device, an active layer is connected to a stem core of a 1×2 splitter on a substrate, a first diffraction grating is coupled to a first twig core of the 1×2 splitter, and a second diffraction grating is coupled to a second twig core of the 1×2 splitter. An active layer-micro heater is designed to supply heat to the active layer. First and second micro heaters are designed to supply heats to the first and second diffraction gratings, respectively, thereby varying a Bragg wavelength.
Abstract:
Provided is a resonator of a hybrid laser diode. The resonator includes: a substrate including a semiconductor layer where a hybrid waveguide, a multi-mode waveguide, and a single mode waveguide are connected in series; a compound semiconductor waveguide, provided on the hybrid waveguide of the semiconductor layer, having a tapered coupling structure at one end of the compound semiconductor waveguide, the tapered coupling structure overlapping the multi-mode waveguide partially; and a reflection part provided on one end of the single mode waveguide. The multi-mode waveguide has a narrower width than the hybrid waveguide and the single mode waveguide has a narrower width than the multi-mode waveguide.
Abstract:
Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating.
Abstract:
Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.
Abstract:
Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating.
Abstract:
Provided are a laser diode generating passive mode locking that does not contain non-linear sector of an SA, and a method of creating an optical pulse using the same diode. The laser diode includes a DFB sector serving as a reflector and a gain sector. The gain sector is connected to the DFB sector and includes an as-cleaved facet formed at the end of the gain sector. When a current less than a threshold current is applied to the DFB sector to allow the DFB sector to operate as a reflector, passive mode locking occurs swiftly and therefore a sector of the SA is not required, which makes manufacturing simple. Also, it is possible to effectively extend a frequency variable region compared to using of the SA.
Abstract:
A light source has a structure in which a 3-dB beam splitter is integrated with a Febry-Perot laser diode having a cleaved plane. A first waveguide grating and a first refractive index modifier changing a Bragg wavelength of the first waveguide grating are provided at one branch of the 3-dB beam splitter. A second waveguide grating and a second refractive index modifier changing a Bragg wavelength of the second waveguide grating are provided at another branch of the 3-dB beam splitter.
Abstract:
Provided are a dual mode semiconductor laser and a terahertz wave apparatus using the same. The dual mode semiconductor laser includes a distributed feedback laser structure section including a first diffraction grating on a substrate and a distributed Bragg reflector laser structure section including a second diffraction grating on the substrate. A first wavelength oscillated by the distributed feedback laser structure section and a second wavelength oscillated by the distributed Bragg reflector laser structure section are different from each other, and the distributed feedback laser structure section and the distributed Bragg reflector laser structure section share the same gain medium with each other.
Abstract:
Provided is a multi-wavelength optical source generator. The multi-wavelength optical source generator includes: a gain part generating a plurality of lights through a plurality of gain waveguides; a reflective part transmitting or reflecting lights provided from each of the plurality of gain waveguides according to a wavelength; and a multiplexing part multiplexing a plurality of lights transmitted and outputted through the reflective part.
Abstract:
Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.