发明申请
US20090159997A1 WAFER LEVEL PACKAGE STRUCTURE AND PRODUCTION METHOD THEREFOR
有权
WAFER LEVEL PACKAGE结构及其生产方法
- 专利标题： WAFER LEVEL PACKAGE STRUCTURE AND PRODUCTION METHOD THEREFOR
- 专利标题（中）： WAFER LEVEL PACKAGE结构及其生产方法
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申请号： US12094600申请日： 2006-11-24
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公开(公告)号： US20090159997A1公开(公告)日： 2009-06-25
- 发明人: Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
- 申请人： Takafumi Okudo , Yuji Suzuki , Yoshiyuki Takegawa , Toru Baba , Kouji Gotou , Hisakazu Miyajima , Kazushi Kataoka , Takashi Saijo
- 优先权： JP2005-341223 20051125; JP2005-341224 20051125; JP2005-341225 20051125; JP2005-341253 20051125; JP2005-371049 20051222; JP2005-371052 20051222; JP2005-371053 20051222; JP2005-371054 20051222; JP2006-089558 20060328; JP2006-089589 20060328
- 国际申请： PCT/JP2006/323445 WO 20061124
- 主分类号： H01L29/84
- IPC分类号： H01L29/84 ; H01L21/50
摘要：
A wafer level package structure, in which a plurality of compact sensor devices with small variations in sensor characteristics are formed, and a method of producing the same are provided. This package structure has a semiconductor wafer having plural sensor units, and a package wafer bonded to the semiconductor wafer. The semiconductor wafer has a first metal layer formed with respect to each of the sensor units. The package wafer has a bonding metal layer at a position facing the first metal layer. Since a bonding portion between the semiconductor wafer and the package wafer is formed at room temperature by a direct bonding between activated surfaces of the first metal layer and the bonding metal layer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding portion.
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