发明申请
US20090160054A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
审中-公开
氮化物半导体器件及其制造方法
- 专利标题： NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 氮化物半导体器件及其制造方法
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申请号： US12269914申请日： 2008-11-13
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公开(公告)号： US20090160054A1公开(公告)日： 2009-06-25
- 发明人: Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Yoichiro Tarui , Yasunori Tokuda
- 申请人： Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Yoichiro Tarui , Yasunori Tokuda
- 申请人地址： JP Tokyo
- 专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-328450 20071220
- 主分类号： H01L21/283
- IPC分类号： H01L21/283 ; H01L29/45
摘要：
A nitride semiconductor device is provided which reduces the contact resistance at the interface between a P-type electrode and a nitride semiconductor layer. A nitride semiconductor device includes a P-type nitride semiconductor layer and a P-type electrode formed on the P-type nitride semiconductor layer. The P-type electrode is formed by successive laminations of a metal layer of a metal having a work function of 5.1 eV or more, a Pd layer of palladium, and a Ta layer of tantalum on the P-type nitride semiconductor layer.
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