发明申请
US20090161468A1 SEMICONDUCTOR MEMORY, MEMORY SYSTEM, AND MEMORY ACCESS CONTROL METHOD
有权
半导体存储器,存储器系统和存储器访问控制方法
- 专利标题: SEMICONDUCTOR MEMORY, MEMORY SYSTEM, AND MEMORY ACCESS CONTROL METHOD
- 专利标题(中): 半导体存储器,存储器系统和存储器访问控制方法
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申请号: US12258970申请日: 2008-10-27
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公开(公告)号: US20090161468A1公开(公告)日: 2009-06-25
- 发明人: Shinya FUJIOKA
- 申请人: Shinya FUJIOKA
- 申请人地址: JP Tokyo
- 专利权人: FUJITSU MICROELECTRONICS LIMITED
- 当前专利权人: FUJITSU MICROELECTRONICS LIMITED
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-327678 20071219
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G11C8/18
摘要:
A semiconductor memory is provided, the semiconductor memory including a memory core that includes a plurality of memory cells, a refresh generation unit that generates a refresh request for refreshing the memory cell, a core control unit that performs an access operation in response to an access request, a latency determination unit that activates a latency extension signal upon a conflict between activation of a chip enable signal and the refresh request and that deactivates the latency extension signal in response to deactivation of the chip enable signal, a latency output buffer that outputs the latency extension signal, and a data control unit that changes a latency from the access request to a transfer of data to a data terminal during the activation of the latency extension signal.
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