发明申请
US20090161468A1 SEMICONDUCTOR MEMORY, MEMORY SYSTEM, AND MEMORY ACCESS CONTROL METHOD 有权
半导体存储器,存储器系统和存储器访问控制方法

  • 专利标题: SEMICONDUCTOR MEMORY, MEMORY SYSTEM, AND MEMORY ACCESS CONTROL METHOD
  • 专利标题(中): 半导体存储器,存储器系统和存储器访问控制方法
  • 申请号: US12258970
    申请日: 2008-10-27
  • 公开(公告)号: US20090161468A1
    公开(公告)日: 2009-06-25
  • 发明人: Shinya FUJIOKA
  • 申请人: Shinya FUJIOKA
  • 申请人地址: JP Tokyo
  • 专利权人: FUJITSU MICROELECTRONICS LIMITED
  • 当前专利权人: FUJITSU MICROELECTRONICS LIMITED
  • 当前专利权人地址: JP Tokyo
  • 优先权: JP2007-327678 20071219
  • 主分类号: G11C7/00
  • IPC分类号: G11C7/00 G11C8/18
SEMICONDUCTOR MEMORY, MEMORY SYSTEM, AND MEMORY ACCESS CONTROL METHOD
摘要:
A semiconductor memory is provided, the semiconductor memory including a memory core that includes a plurality of memory cells, a refresh generation unit that generates a refresh request for refreshing the memory cell, a core control unit that performs an access operation in response to an access request, a latency determination unit that activates a latency extension signal upon a conflict between activation of a chip enable signal and the refresh request and that deactivates the latency extension signal in response to deactivation of the chip enable signal, a latency output buffer that outputs the latency extension signal, and a data control unit that changes a latency from the access request to a transfer of data to a data terminal during the activation of the latency extension signal.
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