发明申请
- 专利标题： LOW WET ETCH RATE SILICON NITRIDE FILM
- 专利标题（中）： 低湿蚀刻硅氮化硅膜
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申请号： US11962674申请日： 2007-12-21
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公开(公告)号： US20090163041A1公开(公告)日： 2009-06-25
- 发明人: Hemant P. Mungekar , Jing Wu , Young S. Lee , Anchuan Wang
- 申请人： Hemant P. Mungekar , Jing Wu , Young S. Lee , Anchuan Wang
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.
公开/授权文献
- US07678715B2 Low wet etch rate silicon nitride film 公开/授权日：2010-03-16