发明申请
- 专利标题: MAGNETO-RESISTIVE ELEMENT
- 专利标题(中): 磁电元件
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申请号: US12361575申请日: 2009-01-29
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公开(公告)号: US20090166322A1公开(公告)日: 2009-07-02
- 发明人: Sumio IKEGAWA , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
- 申请人: Sumio IKEGAWA , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
- 优先权: JP2005-285054 20050929
- 主分类号: B44C1/22
- IPC分类号: B44C1/22
摘要:
A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.
公开/授权文献
- US08349622B2 Magneto-resistive element 公开/授权日:2013-01-08
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