发明申请
US20090166613A1 Composition for Forming Gate Insulating Layer of Organic Thin-Film Transistor and Organic Thin Film Transistor Using the Same
有权
用于形成有机薄膜晶体管的栅极绝缘层和使用其的有机薄膜晶体管的组成
- 专利标题： Composition for Forming Gate Insulating Layer of Organic Thin-Film Transistor and Organic Thin Film Transistor Using the Same
- 专利标题（中）： 用于形成有机薄膜晶体管的栅极绝缘层和使用其的有机薄膜晶体管的组成
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申请号： US12226955申请日： 2007-05-03
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公开(公告)号： US20090166613A1公开(公告)日： 2009-07-02
- 发明人: Jae-Min Lee , Hyeon Choi , Min-Jeong Lee , Hee-Jung Kim , Young-Whan Park , Dong-Ryul Kim
- 申请人： Jae-Min Lee , Hyeon Choi , Min-Jeong Lee , Hee-Jung Kim , Young-Whan Park , Dong-Ryul Kim
- 优先权： KR10-2006-0040636 20060504
- 国际申请： PCT/KR2007/002176 WO 20070503
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; C08G63/688 ; H01L51/05
摘要：
The present invention relates to a composition for forming a gate insulating layer of an organic thin film transistor comprising polyarylate, and an organic thin film transistor comprising a gate insulating layer, which is formed using the composition, in contact with an organic semiconductor channel.
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