发明申请
US20090166743A1 INDEPENDENT GATE ELECTRODES TO INCREASE READ STABILITY IN MULTI-GATE TRANSISTORS
审中-公开
独立门电极增加多栅极晶体管的读稳定性
- 专利标题： INDEPENDENT GATE ELECTRODES TO INCREASE READ STABILITY IN MULTI-GATE TRANSISTORS
- 专利标题（中）： 独立门电极增加多栅极晶体管的读稳定性
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申请号： US11964633申请日： 2007-12-26
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公开(公告)号： US20090166743A1公开(公告)日： 2009-07-02
- 发明人: Ravi Pillarisetty , Brian S. Doyle , Jack T. Kavalieros , Robert S. Chau
- 申请人： Ravi Pillarisetty , Brian S. Doyle , Jack T. Kavalieros , Robert S. Chau
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28
摘要：
Independent gate electrodes for multi-gate transistors are generally described. In one example, an apparatus includes a semiconductor fin, one or more multi-gate pull down (PD) gate stacks coupled with the semiconductor fin, the one or more PD gate stacks including a PD gate electrode, and one or more multi-gate pass gate (PG) gate stacks coupled with the semiconductor fin, the one or more PG gate stacks including a PG gate electrode, the PG gate electrode having a greater threshold voltage than the PD gate electrode.
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