发明申请
- 专利标题： METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法
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申请号： US12164071申请日： 2008-06-29
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公开(公告)号： US20090170035A1公开(公告)日： 2009-07-02
- 发明人: Ki Lyoung LEE , Cheol Kyu Bok
- 申请人： Ki Lyoung LEE , Cheol Kyu Bok
- 申请人地址： KR Icheon-si
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Icheon-si
- 优先权： KR10-2007-0140859 20071228; KR10-2008-0049895 20080528
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/02 ; H01L21/20
摘要：
A method for fabricating a semiconductor device includes forming a first mask pattern over an etch target layer, forming a second mask pattern over the etch target layer, forming spacers at sidewalls of the first mask pattern and the second mask pattern, and etching the etch target layer with an etching mask where the second mask pattern is removed. The method improves a profile of a pad pattern and critical dimension uniformity.
公开/授权文献
- US08304174B2 Method for fabricating semiconductor device 公开/授权日：2012-11-06
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