发明申请
US20090173984A1 INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT
审中-公开
集成电路及制造集成电路的方法
- 专利标题: INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT
- 专利标题(中): 集成电路及制造集成电路的方法
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申请号: US11970640申请日: 2008-01-08
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公开(公告)号: US20090173984A1公开(公告)日: 2009-07-09
- 发明人: Peng-Fei Wang
- 申请人: Peng-Fei Wang
- 申请人地址: DE Munchen
- 专利权人: QIMONDA AG
- 当前专利权人: QIMONDA AG
- 当前专利权人地址: DE Munchen
- 主分类号: H01L29/788
- IPC分类号: H01L29/788 ; H01L21/336
摘要:
The present invention provides an integrated circuit with a floating body transistor comprising two source/drain regions and a floating body region arranged between the two source/drain regions comprising: a back gate electrode separated from the floating body by a first dielectric layer; a control gate electrode, separated from the floating body by a second dielectric layer and overlying the back gate electrode; and a third dielectric layer arranged between the back gate electrode and the control gate electrode. The present invention provides also a method of manufacturing an integrated circuit and a method of operating an integrated circuit.