发明申请
US20090174075A1 SIMULTANEOUS GRAIN MODULATION FOR BEOL APPLICATIONS 失效
用于BEOL应用的同时颗粒调节

SIMULTANEOUS GRAIN MODULATION FOR BEOL APPLICATIONS
摘要:
The invention is directed to an improved semiconductor structure, such that within the same insulating layer, Cu interconnects embedded within the same insulating level layer have a different Cu grain size than other Cu interconnects embedded within the same insulating level layer.
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