发明申请
- 专利标题： Semiconductor device, method of manufacturing the same, and substrate for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法及其制造用基板
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申请号： US12379968申请日： 2009-03-05
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公开(公告)号： US20090176352A1公开(公告)日： 2009-07-09
- 发明人: Mitsunori Yokoyama , Kenji Imanishi , Toshihide Kikkawa
- 申请人： Mitsunori Yokoyama , Kenji Imanishi , Toshihide Kikkawa
- 申请人地址： JP Yamanashi JP Kawasaki-shi
- 专利权人： EUDYNA DEVICES, INC.,FUJITSU LIMITED
- 当前专利权人： EUDYNA DEVICES, INC.,FUJITSU LIMITED
- 当前专利权人地址： JP Yamanashi JP Kawasaki-shi
- 优先权： JP2005101823 20050331
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A semiconductor device includes a substrate, a buffer layer that is formed with an aluminum nitride layer on the substrate and has a film thickness of 5 nm to 40 nm, an operating layer that is formed with a gallium nitride-based semiconductor on the buffer layer, and a control electrode that is formed on the operating layer.
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