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    Compound semiconductor device and method of manufacturing the same
    3.
    发明授权
    Compound semiconductor device and method of manufacturing the same 有权
    化合物半导体器件及其制造方法

    公开(公告)号：US08426260B2

    公开(公告)日：2013-04-23

    申请号：US13294726

    申请日：2011-11-11

    Applicant: Toyoo Miyajima ,  Toshihide Kikkawa ,  Kenji Imanishi ,  Toshihiro Ohki ,  Masahito Kanamura

    Inventor： Toyoo Miyajima ,  Toshihide Kikkawa ,  Kenji Imanishi ,  Toshihiro Ohki ,  Masahito Kanamura

    IPC: H01L21/338 ,  H01L29/66

    CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/7787

    Abstract: A compound semiconductor device includes: an electron transport layer formed over a substrate; an electron supply layer formed over the electron transport layer; and a cap layer formed over the electron supply layer; the cap layer includes a first compound semiconductor layer containing GaN; a second compound semiconductor layer containing AlN, which is formed over the first compound semiconductor layer; a third compound semiconductor layer containing GaN, which is formed over the second compound semiconductor layer; and at least one of a first AlGaN-containing layer and a second AlGaN-containing layer, with the first AlGaN-containing layer formed between the first compound semiconductor layer and the second compound semiconductor layer and the Al content increases toward the second compound semiconductor layer, and the second AlGaN-containing layer formed between the second compound semiconductor layer and the third compound semiconductor layer and the Al content increases toward the second compound semiconductor layer.

    Abstract translation: 化合物半导体器件包括：形成在衬底上的电子传输层; 形成在电子传输层上的电子供应层; 以及形成在所述电子供给层上的盖层; 盖层包括含有GaN的第一化合物半导体层; 含有AlN的第二化合物半导体层，其形成在所述第一化合物半导体层上; 含有GaN的第三化合物半导体层，其形成在所述第二化合物半导体层上; 以及第一AlGaN含有层和第二含AlGaN的层中的至少一个，其中形成在第一化合物半导体层和第二化合物半导体层之间的第一AlGaN含有层，并且Al含量朝向第​​二化合物半导体层增加 并且形成在第二化合物半导体层和第三化合物半导体层之间的第二AlGaN含量层和Al含量朝向第​​二化合物半导体层增加。

    Compound semiconductor device and manufacturing method of the same
    4.
    发明授权
    Compound semiconductor device and manufacturing method of the same 有权
    复合半导体器件及其制造方法

    公开(公告)号：US08344419B2

    公开(公告)日：2013-01-01

    申请号：US12210442

    申请日：2008-09-15

    Applicant: Toshihide Kikkawa

    Inventor： Toshihide Kikkawa

    IPC: H01L29/66

    CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/267 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7787

    Abstract: An AlN layer (2), a GaN buffer layer (3), a non-doped AlGaN layer (4a), an n-type AlGaN layer (4b), an n-type GaN layer (5), a non-doped AlN layer (6) and an SiN layer (7) are sequentially formed on an SiC substrate (1). At least three openings are formed in the non-doped AlN layer (6) and the SiN layer (7), and a source electrode (8a), a drain electrode (8b) and a gate electrode (19) are evaporated in these openings.

    Abstract translation: AlN层（2），GaN缓冲层（3），非掺杂AlGaN层（4a），n型AlGaN层（4b），n型GaN层（5），非掺杂AlN 层（6）和SiN层（7）依次形成在SiC衬底（1）上。 在非掺杂AlN层（6）和SiN层（7）中形成至少三个开口，并且源电极（8a），漏电极（8b）和栅电极（19）在这些开口中蒸发 。

    Compound semiconductor device and method of manufacturing the same
    5.
    发明授权
    Compound semiconductor device and method of manufacturing the same 有权
    化合物半导体器件及其制造方法

    公开(公告)号：US08294181B2

    公开(公告)日：2012-10-23

    申请号：US12697391

    申请日：2010-02-01

    Applicant: Toshihide Kikkawa ,  Kenji Imanishi

    Inventor： Toshihide Kikkawa ,  Kenji Imanishi

    IPC: H01L29/66

    CPC classification number: H01L29/7783 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

    Abstract: A compound semiconductor device is provided with a substrate, an AlN layer formed over the substrate, an AlGaN layer formed over the AlN layer and larger in electron affinity than the AlN layer, another AlGaN layer formed over the AlGaN layer and smaller in electron affinity than the AlGaN layer. Furthermore, there are provided an i-GaN layer formed over the latter AlGaN layer, and an i-AlGaN layer and an n-AlGaN layer formed over the i-GaN layer.

    Abstract translation: 化合物半导体器件设置有衬底，在衬底上形成的AlN层，在AlN层上形成的AlGaN层和比AlN层更大的电子亲和力，在AlGaN层上形成另一AlGaN层，并且电子亲和力小于 AlGaN层。 此外，提供了形成在后面的AlGaN层上的i-GaN层，以及在i-GaN层上形成的i-AlGaN层和n-AlGaN层。

    SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    6.
    发明申请
    SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
    半导体器件制造方法

    公开(公告)号：US20120196419A1

    公开(公告)日：2012-08-02

    申请号：US13443228

    申请日：2012-04-10

    Applicant: Masahito KANAMURA ,  Toshihide Kikkawa

    Inventor： Masahito KANAMURA ,  Toshihide Kikkawa

    IPC: H01L21/336

    CPC classification number: H01L29/41 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/7787

    Abstract: In an MIS-type GaN-FET, a base layer made of a conductive nitride including no oxygen, here, TaN, is provided on a surface layer as a nitride semiconductor layer to cover at least an area of a lower face of a gate insulation film made of Ta2O5 under a gate electrode.

    Abstract translation: 在MIS型GaN-FET中，作为氮化物半导体层，在作为氮化物半导体层的表面层上设置由不含氧的导电性氮化物构成的基底层Ta N，以覆盖栅极绝缘体的下表面的至少一部分 由Ta2O5制成的薄膜在栅电极下。

    COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    8.
    发明申请
    COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
    化合物半导体器件及其制造方法

    公开(公告)号：US20110272704A1

    公开(公告)日：2011-11-10

    申请号：US13185888

    申请日：2011-07-19

    Applicant: Toshihide KIKKAWA

    Inventor： Toshihide KIKKAWA

    IPC: H01L29/20

    CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/267 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7787

    Abstract: An AlN layer (2), a GaN buffer layer (3), a non-doped AlGaN layer (4a), an n-type AlGaN layer (4b), an n-type GaN layer (5), a non-doped AlN layer (6) and an SiN layer (7) are sequentially formed on an SiC substrate (1). At least three openings are formed in the non-doped AlN layer (6) and the SiN layer (7), and a source electrode (8a), a drain electrode (8b) and a gate electrode (19) are evaporated in these openings.

    Abstract translation: AlN层（2），GaN缓冲层（3），非掺杂AlGaN层（4a），n型AlGaN层（4b），n型GaN层（5），非掺杂AlN 层（6）和SiN层（7）依次形成在SiC衬底（1）上。 在非掺杂AlN层（6）和SiN层（7）中形成至少三个开口，并且源电极（8a），漏电极（8b）和栅电极（19）在这些开口中蒸发 。

    Compound semiconductor structure
    9.
    发明授权
    Compound semiconductor structure 有权
    化合物半导体结构

    公开(公告)号：US08030164B2

    公开(公告)日：2011-10-04

    申请号：US12248357

    申请日：2008-10-09

    Applicant: Toshihide Kikkawa ,  Kenji Imanishi

    Inventor： Toshihide Kikkawa ,  Kenji Imanishi

    IPC: H01L29/205 ,  H01L21/336 ,  H01L29/778

    CPC classification number: H01L29/7787 ,  H01L21/02378 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/66462

    Abstract: A method for manufacturing a compound semiconductor structure, includes (a) selecting a conductive SiC substrate in accordance with color and resistivity and (b) epitaxially growing a GaN series compound semiconductor layer on the selected conductive SiC substrate. The step (a) preferably selects a conductive SiC substrate whose main color is green, whose conductivity type is n-type and whose resistivity is 0.08 Ωcm to 1×105 Ωcm, or whose main color is black, whose conductivity type is p-type and whose resistivity is 1×103 Ωcm to 1×105 Ωcm, or whose main color is blue, whose conductivity type is p-type and whose resistivity is 10 Ωcm to 1×105 Ωcm. The step (b) preferably includes (b-1) growing an AlInGaN layer having a thickness not thinner than 10 μm on the conductive SiC substrate by hydride VPE.

    Abstract translation: 一种化合物半导体结构的制造方法，包括：（a）根据颜色和电阻率选择导电性SiC基板，（b）在选择的导电性SiC基板上外延生长GaN系化合物半导体层。 步骤（a）优选选择导电型为n型，电阻率为0.08〜OHgr·cm〜1×105Ω·cm的导电性SiC基板，其主色为黑色，导电型 是p型，电阻率为1×10 3Ω·OHgr·cm〜1×105＆OHgr·cm，或其主要颜色为蓝色，其导电类型为p型，电阻率为10＆OHgr; cm至1×105＆OHgr; 厘米。 步骤（b）优选包括（b-1）通过氢化物VPE在导电SiC衬底上生长厚度不小于10μm的AlInGaN层。

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