发明申请
- 专利标题: METHOD OF FORMING A PATTERN OF A SEMICONDUCTOR DEVICE
- 专利标题(中): 形成半导体器件图案的方法
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申请号: US12132556申请日: 2008-06-03
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公开(公告)号: US20090181543A1公开(公告)日: 2009-07-16
- 发明人: Sung Min JEON
- 申请人: Sung Min JEON
- 申请人地址: KR Icheon-si
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 当前专利权人地址: KR Icheon-si
- 优先权: KR10-2008-03953 20080114
- 主分类号: H01L21/311
- IPC分类号: H01L21/311
摘要:
In a method of forming patterns of a semiconductor device, a to-be-etched layer is formed on a semiconductor substrate. First etch mask patterns are formed over the to-be-etched layer. An auxiliary layer is formed on the first etch mask patterns and the to-be-etched layer. The auxiliary layer is thicker on upper sidewalls of the first etch mask patterns than on lower sidewalls thereof. Second etch mask patterns are formed in concave portions of the auxiliary layer. The auxiliary layer between the first and second etch mask patterns is removed. The to-be-etched layer is patterned using the first and second etch mask patterns as an etch mask.
公开/授权文献
- US07906272B2 Method of forming a pattern of a semiconductor device 公开/授权日:2011-03-15