发明申请
- 专利标题： Method of Setting Conditions For Film Deposition, Photovoltaic Device, and Production Process, Production Apparatus and Test Method for Same
- 专利标题（中）： 设置膜沉积条件，光伏器件和生产工艺，生产设备及其测试方法的方法
-
申请号： US12308866申请日： 2007-08-30
-
公开(公告)号： US20090183775A1公开(公告)日： 2009-07-23
- 发明人: Saneyuki Goya , Youji Nakano , Kouji Satake
- 申请人： Saneyuki Goya , Youji Nakano , Kouji Satake
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Heavy Industries, Ltd.
- 当前专利权人： Mitsubishi Heavy Industries, Ltd.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-239608 20060904
- 国际申请： PCT/JP2007/066944 WO 20070830
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L21/00 ; B05C11/00
摘要：
A photovoltaic device having a high conversion efficiency is produced in a stable manner. The conditions for film deposition of a microcrystalline silicon photovoltaic layer (4) in a photovoltaic device are set based on the Raman peak ratio within a Raman spectrum obtained at the substrate (1) side of the microcrystalline silicon layer (4), and the Raman peak ratio within a Raman spectrum obtained at the opposite side to the substrate (1).
公开/授权文献
信息查询
IPC分类:
